Molecular model for intrinsic time-dependent dielectric breakdown in SiO2dielectrics and the reliability implications for hyper-thin gate oxide

2000 ◽  
Vol 15 (5) ◽  
pp. 462-470 ◽  
Author(s):  
J W McPherson ◽  
R B Khamankar
Keyword(s):  
Dielectric Breakdown ◽  
Molecular Model ◽  
Gate Oxide ◽  
Time Dependent ◽  
Intrinsic Time ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Gate Oxide

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 782-787
Author(s):  
Kevin Matocha ◽  
In Hwan Ji ◽  
Sauvik Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Gate Bias ◽  
Constant Voltage ◽  
Time Dependent Dielectric Breakdown ◽  
Planar Silicon ◽  
State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

2011 ◽  
Vol 520 (1) ◽  
pp. 662-666 ◽  
Author(s):  
Larry Zhao ◽  
Melina Lofrano ◽  
Kristof Croes ◽  
Els Van Besien ◽  
Zsolt Tőkei ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Diffusion Barriers ◽  
Time Dependent ◽  
Copper Diffusion ◽  
Intrinsic Time ◽  
Time Dependent Dielectric Breakdown

Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

1992 ◽  
Vol 262 ◽  
Author(s):  
G. -S. Lee ◽  
J. -G. Park ◽  
S. -P. Choi ◽  
C. -H. Shin ◽  
Y. -B. Sun ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Surface Region ◽  
Gate Oxide ◽  
Near Surface ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Gate Oxide ◽  
Si Ion Implantation ◽  
Gate Oxide Integrity

ABSTRACTIn this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance and chemical etching/optical microscopy, we investigated effects of Si ion implantation upon formation of D-defects and thin gate oxide integrity. Our data show that addition of Si ion implantation with a dose of up to 1013 ions/cm2 improves oxide integrity if the implantation is done at a certain step just before sacrificial oxidation in the Mb DRAM process. However, no improvement in oxide integrity is observed when the same implantation is done on the virgin wafer surfaces at the start of the same Mb DRAM process. We discuss our hypothesis that the improvement in oxide integrity is due to a reduction in the D-defect density in the near-surface region of the wafer.

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

2008 ◽  
Vol 600-603 ◽  
pp. 1131-1134 ◽  
Author(s):  
Kevin Matocha ◽  
Zachary Stum ◽  
Steve Arthur ◽  
Greg Dunne ◽  
Ljubisa Stevanovic
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time To Failure ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Mean Time

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.

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