Very low temperature (450 °C) selective epitaxial growth of heavilyin situboron-doped SiGe layers

AbstractLow-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

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Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth

Journal of Applied Physics ◽

10.1063/1.359818 ◽

1995 ◽

Vol 78 (7) ◽

pp. 4710-4714 ◽

Cited By ~ 6

Author(s):

H.‐C. Tseng ◽

C. Y. Chang ◽

F. M. Pan ◽

L. P. Chen

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Dry Etching ◽

Selective Epitaxial Growth

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Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane

Applied Physics Letters ◽

10.1063/1.98301 ◽

1987 ◽

Vol 51 (23) ◽

pp. 1922-1924 ◽

Cited By ~ 21

Author(s):

K. Baert ◽

J. Symons ◽

W. Vandervorst ◽

J. Vanhellemont ◽

M. Caymax ◽

...

Keyword(s):

Low Temperature ◽

Glow Discharge ◽

Epitaxial Growth ◽

Very Low Temperature

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ChemInform Abstract: Low-Temperature (850 °C) Silicon Selective Epitaxial Growth on HF-Treated Si(100) Substrates Using SiH4-HCl-H2 Systems.

ChemInform ◽

10.1002/chin.199204297 ◽

2010 ◽

Vol 23 (4) ◽

pp. no-no

Author(s):

A. MIYAUCHI ◽

Y. INOUE ◽

T. SUZUKI

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Selective Epitaxial Growth

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Very-low-temperature liquid-phase epitaxial growth of silicon

Materials Letters ◽

10.1016/0167-577x(90)90150-k ◽

1990 ◽

Vol 9 (2-3) ◽

pp. 53-56 ◽

Cited By ~ 2

Author(s):

Soo Hong Lee ◽

Stephen A. Healy ◽

Trevor L. Young ◽

Martin A. Green

Keyword(s):

Liquid Phase ◽

Low Temperature ◽

Epitaxial Growth ◽

Liquid Phase Epitaxial ◽

Liquid Phase Epitaxial Growth ◽

Temperature Liquid ◽

Very Low Temperature

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Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.3500 ◽

1994 ◽

Vol 33 (Part 1, No. 6A) ◽

pp. 3500-3504 ◽

Cited By ~ 3

Author(s):

Tadachika Hidaka ◽

Ikuo Suemune

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Metalorganic Molecular Beam Epitaxy

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Silicon wafer preparation for low-temperature selective epitaxial growth

Microelectronics Reliability ◽

10.1016/0026-2714(91)90164-3 ◽

1991 ◽

Vol 31 (5) ◽

pp. 1053

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Silicon Wafer ◽

Selective Epitaxial Growth

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Surface planarity and microstructure of low temperature silicon SEG and ELO

Journal of Materials Research ◽

10.1557/jmr.1991.0784 ◽

1991 ◽

Vol 6 (4) ◽

pp. 784-791 ◽

Cited By ~ 10

Author(s):

M.C. Arst ◽

K.N. Ritz ◽

S. Redkar ◽

J.O. Borland ◽

J. Hann ◽

...

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Leakage Current ◽

Epitaxial Lateral Overgrowth ◽

Selective Epitaxial Growth ◽

Lateral Overgrowth ◽

Interface Defects ◽

Interface Characteristics ◽

Standard Orientation ◽

Electrical Data

Surface planarity and epi/SiO2 interface characteristics of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO), deposited at 800–950 °C/10 or 25 Torr, have been studied for micron-sized structures. SEG at 860 °C showed superior planarity and reduced ratio of facet width to epi thickness, compared to higher deposition temperatures. Data showed that epi/SiO2 interface defects are greatly reduced for structures parallel to (100) and/or by adding HCl to the source gas, compared to interfaces positioned at standard orientation (110) on a (100) substrate. The transition from SEG to ELO in view of the facet orientations will be discussed. To correlate structural with electrical data, n+/p diodes were fabricated on as-grown and polish planarized SEG. Leakage current values of approximately 100 nA/cm2 could be measured. These are comparable to similar n+/p junctions fabricated on conventional epi.

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