Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

2006 ◽  
Vol 911 ◽  
Author(s):  
Yaroslav Koshka ◽  
Bharat Krishnan ◽  
Huang-De Lin ◽  
Galyna Melnychuk
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Surface ◽  
Epitaxial Layers ◽  
Selective Epitaxial Growth ◽  
Dopant Incorporation ◽  
Nitrogen Donor ◽  
Order Of Magnitude ◽  
Silicon Vapor

AbstractLow-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

2007 ◽  
Vol 556-557 ◽  
pp. 149-152 ◽  
Author(s):  
Bharat Krishnan ◽  
Hrishikesh Das ◽  
Huang De Lin ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Growth Conditions ◽  
Lower Growth ◽  
New Device ◽  
Selective Epitaxial Growth ◽  
Device Applications ◽  
Lower Temperature

Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below 13000C using CH3Cl precursor offered a promise of new device applications that could benefit from lower-temperature growth process. In this work, selective epitaxial growth (SEG) of 4H-SiC mesas using conventional SiO2 low temperature mask is reported. Virtually no nucleation on the mask could be observed after SEG at 13000C. The mask could be easily removed after the growth, with no degradation of the surface of SiC substrate under the mask. For the growth conditions that normally resulted in growth rate of 2 /m/hr and defect-free epilayer morphology during regular full-wafer (non-SEG) epitaxy, the epilayer morphology during SEG was significantly degraded by the appearance of oriented triangular defects, while the growth rate increased more than three times in comparison to the blanket epitaxial growth due to the loading effect. The growth at optimized growth conditions and lower growth rate resulted in significant reduction of the surface defects, making this approach promising for obtaining device-quality mesas. The crystal quality of the mesas, defects at the mesa walls, formation of facets during SEG, and other effects are reported.

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

2008 ◽  
Vol 600-603 ◽  
pp. 163-166 ◽  
Author(s):  
Hrishikesh Das ◽  
Bharat Krishnan ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Conditions ◽  
Local Loading ◽  
Average Growth ◽  
Loading Effect ◽  
Selective Epitaxial Growth ◽  
Sio2 Mask ◽  
Growth Rate Distribution

In this work, the local-loading effect and its influence on the growth rate enhancement and the growth rate non-homogeneity is investigated during the halo-carbon low-temperature selective epitaxial growth (LTSEG) using an SiO2 mask. The average growth rate during the LTSEG can be more than three-times higher than in blanket epitaxy at the same growth conditions. Both the size of the LTSEG seed windows and the surrounding area covered with the mask determine the growth rate non-homogeneity. A model for predicting the growth rate distribution is suggested.

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

2009 ◽  
Vol 615-617 ◽  
pp. 121-124 ◽  
Author(s):  
Hrishikesh Das ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Flow Direction ◽  
Threading Dislocations ◽  
Selective Epitaxial Growth ◽  
Moderate Growth ◽  
Magnitude Conversion ◽  
Order Of Magnitude ◽  
High Concentrations

Dislocations were investigated in the halo-carbon low-temperature epitaxial growth and low-temperature selective epitaxial growth (LTSEG) conducted at 13000C. The origin of triangular defects was investigated in low-temperature epilayers grown at higher growth rates with HCl addition. Due to the conversion of substrates’ basal plane dislocations (BPD) into threading dislocations, the concentration of BPDs was about an order of magnitude lower than the concentration of threading dislocations at moderate growth rates. An additional order of magnitude conversion of BPDs into threading dislocations was observed at higher grow rates achieved with HCl addition. In LTSEG epilayers, dislocation concentration away from the mesa walls was comparable to the blanket (i.e., regular non-selective) growth. High concentrations of BPDs were found only at mesa edges located on the “upstream” side with respect to the step-flow direction. No substrate defects could be traced to the triangular defects. Instead, the disturbances causing the triangular defect generation are introduced during the epitaxial process.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth

1995 ◽  
Vol 78 (7) ◽  
pp. 4710-4714 ◽  
Author(s):  
H.‐C. Tseng ◽  
C. Y. Chang ◽  
F. M. Pan ◽  
L. P. Chen
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Dry Etching ◽  
Selective Epitaxial Growth

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

Low Temperature Epitaxial Growth of AlN & GaN Thin Films by the Method of Ion Beam Assisted Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Ig-Hyeon Kim ◽  
Chan-Wook Jeon ◽  
Seon-Hyo Kim
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Amorphous Layer ◽  
Misfit Strain ◽  
Epitaxial Layers ◽  
Ion Beam Assisted Deposition ◽  
High Resolution Tem

ABSTRACTThe epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

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