Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

2016 ◽  
Vol 31 (10) ◽  
pp. 105007 ◽  
Author(s):  
Jason T Wright ◽  
Daniel J Carbaugh ◽  
Morgan E Haggerty ◽  
Andrea L Richard ◽  
David C Ingram ◽  
...  
1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.


1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  

1971 ◽  
Vol 118 (4) ◽  
pp. 614 ◽  
Author(s):  
K. H. Beckmann ◽  
N. J. Harrick

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