Tunneling Current in Thin Silicon Dioxide Films

1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Electric Fields ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Silicon Dioxide Films ◽  
Thin Silicon ◽  
Tunneling Currents ◽  
Dc Component ◽  
P Type

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

2016 ◽  
Vol 31 (10) ◽  
pp. 105007 ◽  
Author(s):  
Jason T Wright ◽  
Daniel J Carbaugh ◽  
Morgan E Haggerty ◽  
Andrea L Richard ◽  
David C Ingram ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxygen Atmosphere ◽  
Residual Oxygen ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

2008 ◽  
Vol 47 (11) ◽  
pp. 8317-8320
Author(s):  
Takaaki Hirokane ◽  
Naoto Yoshii ◽  
Tatsuya Okazaki ◽  
Shinichi Urabe ◽  
Kazuo Nishimura ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Metal Gates ◽  
Silicon Dioxide Films

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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