Controlling growth rate of ultra-thin Silicon Dioxide layer by incorporating nitrogen gas during dry thermal oxidation

2014 ◽  
Author(s):  
A.H. Azman ◽  
R. M. Ayub ◽  
M. K. Md Arshad ◽  
S. Norhafiezah ◽  
M.F.M. Fathil ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Nitrogen Gas ◽  
Silicon Dioxide Layer ◽  
Thin Silicon

Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

1988 ◽  
Vol 135 (1) ◽  
pp. 150-155 ◽  
Author(s):  
Yukio Miyai ◽  
Kenji Yoneda ◽  
Hiroshi Oishi ◽  
Hirofumi Uchida ◽  
Morio Inoue
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon

Integrated Tunneling Device for High Sensitive Sensor Applications

2006 ◽  
Vol 326-328 ◽  
pp. 317-320
Author(s):  
Dong Weon Lee ◽  
Young Soo Choi ◽  
Il Kweon Oh
Keyword(s):  
Silicon Dioxide ◽  
Electron Tunneling ◽  
Scanning Probe ◽  
Maximum Strain ◽  
Silicon Dioxide Layer ◽  
Sensor Applications ◽  
Sensitive Sensor ◽  
Probe Microscope ◽  
Thin Silicon ◽  
Higher Sensitivity

This paper describes an integrated tunneling sensor for applications of an electronic nose and a scanning probe microscope. Ultra-thin silicon dioxide having a thickness of ~2 nm is used as a material of the tunneling sensor. It provides much higher sensitivity in comparison with others sensing methods. The tunneling sensor is placed on a fixed edge where the maximum strain arises. As additional masses or forces are added to the surface of the cantilever, the thickness of the thin silicon dioxide layer is slightly decreased. By using exponential nature of electron tunneling dominated by the thickness of the silicon dioxide it can be used as an ultra-high sensitive sensor. The thin dioxide is fabricated by dry oxidation using a vertical furnace. The cantilever structures are defined by conventional MEMS technologies. Current density of the tunneling sensor is evaluated as a function of voltage and is compared with numerical analysis based on direct tunneling phenomena.

Tunneling Current in Thin Silicon Dioxide Films

1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Electric Fields ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Silicon Dioxide Films ◽  
Thin Silicon ◽  
Tunneling Currents ◽  
Dc Component ◽  
P Type

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

2016 ◽  
Vol 31 (10) ◽  
pp. 105007 ◽  
Author(s):  
Jason T Wright ◽  
Daniel J Carbaugh ◽  
Morgan E Haggerty ◽  
Andrea L Richard ◽  
David C Ingram ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxygen Atmosphere ◽  
Residual Oxygen ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Wet Oxidation of Epitaxial Ge.36Si.64 on (100)Si

1991 ◽  
Vol 220 ◽  
Author(s):  
W. S. Liu ◽  
G. Bai ◽  
M-A. Nicolet ◽  
C. H. Chern ◽  
V. Arbet ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Oxidation Reaction ◽  
Activation Energies ◽  
Wet Oxidation ◽  
Silicon Dioxide Layer ◽  
Pure Silicon ◽  
Pile Up

ABSTRACTThe thermal oxidation of epitaxial Ge.36Si.64 on (100)Si is investigated experimentally for a wet ambient at 700°C and 1000°C. A pure silicon dioxide layer with pile-up of Ge behind the oxide is formed at 1000°C. At 700°C, however, both Ge and Si are oxidized. The Ge is included uniformly into the oxide layer without changing the initial Ge/Si ratio. The result at 1000°C follows the thermodynamical picture which predicts the same result at 700°C also, contrary to observation. The different result at 700°C is due to kinetic constraints which can be explained by different activation energies for the rate of the oxidation reaction and for the Ge or Si diffusivities in GeSi.

ChemInform Abstract: Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors.

ChemInform ◽  
1988 ◽  
Vol 19 (18) ◽  
Author(s):  
Y. MIYAI ◽  
K. YONEDA ◽  
H. OISHI ◽  
H. UCHIDA ◽  
M. INOUE
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon
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