Electrical Conduction in p-Type InSb between 100  and 2 k

1959 ◽  
Vol 73 (1) ◽  
pp. 128-131 ◽  
Author(s):  
E H Putley
Keyword(s):  
Electrical Conduction ◽  
P Type

Fabrication and Evaluation of AlN–SiC Solid Solutions with p-Type Electrical Conduction

2008 ◽  
pp. 39-42
Author(s):  
Ryota Kobayashi ◽  
Junichi Tatami ◽  
Toru Wakihara ◽  
Katsutoshi Komeya ◽  
Takeshi Meguro ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Electrical Conduction ◽  
P Type

scholarly journals Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Conduction ◽  
High Purity ◽  
Localization Length ◽  
Rare Event ◽  
Conduction Mechanisms ◽  
Ge Detector ◽  
Electrical Conduction Mechanisms ◽  
P Type ◽  
Surface Leakage

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

The Electrical Conduction of Ultra Thin SiO2 on Slightly Iron-contaminated p-type Si Wafers

2002 ◽  
Author(s):  
M. N. Chang ◽  
C. Y. Chen ◽  
T. Y. Chang ◽  
F. M. Pan ◽  
T. F. Lei
Keyword(s):  
Electrical Conduction ◽  
P Type

P-type electrical conduction in transparent thin films of CuAlO2

Nature ◽  
10.1038/40087 ◽  
1997 ◽  
Vol 389 (6654) ◽  
pp. 939-942 ◽  
Author(s):  
Hiroshi Kawazoe ◽  
Masahiro Yasukawa ◽  
Hiroyuki Hyodo ◽  
Masaaki Kurita ◽  
Hiroshi Yanagi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conduction ◽  
P Type

p-Type electrical conduction and wide optical band gap in Mg-doped CuAlS2

2008 ◽  
Vol 58 (11) ◽  
pp. 1002-1005 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen
Keyword(s):  
Band Gap ◽  
Electrical Conduction ◽  
Optical Band Gap ◽  
P Type ◽  
Mg Doped

Reduced bandgap and enhanced p-type electrical conduction in Ag-alloyed Cu2O thin films

2020 ◽  
Vol 128 (12) ◽  
pp. 125302
Author(s):  
Pengcheng Hu ◽  
Wenzheng Du ◽  
Mingxu Wang ◽  
Haoming Wei ◽  
Jun Ouyang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conduction ◽  
Cu2o Thin Films ◽  
P Type

Electrical conductivity of p-type BiOCl nanosheets

2015 ◽  
Vol 51 (13) ◽  
pp. 2629-2632 ◽  
Author(s):  
Yoon Myung ◽  
Fei Wu ◽  
Sriya Banerjee ◽  
Jeunghee Park ◽  
Parag Banerjee
Keyword(s):  
Electrical Conductivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical Conduction ◽  
Hydrolysis Method ◽  
P Type

BiOCl nanosheets were synthesized using a facile hydrolysis method and their p-type electrical conduction as a function of oxygen partial pressure was measured.

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