Phase transformation between diamond and graphite in preparation of diamonds by pulsed-laser induced liquid-solid interface reaction

1999 ◽  
Vol 11 (37) ◽  
pp. 7089-7094 ◽  
Author(s):  
J B Wang ◽  
G W Yang
1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.


2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Yuka Yamamuro ◽  
Tomotaka Shimoyama ◽  
Isao Yamashita ◽  
Jiwang Yan

Abstract Irradiation of yttria-stabilized zirconia (YSZ) was performed by a picosecond pulsed laser to investigate the possibility for multiscale surface patterning. Nanoscale laser-induced periodic surface structures (LIPSS) were successfully generated inside microscale grooves over a large surface area under specific conditions. A thermally induced phase transformation of YSZ was identified after laser irradiation, and this phase transformation was restrained by reducing the laser power or the number of irradiations. Moreover, it was found that the generation of LIPSS greatly changed the surface wettability of YSZ. These results demonstrated the possibility of creating zirconia hybrid patterns with high functionality, which may expand the applications of YSZ in industry.


1986 ◽  
Vol 48 (4) ◽  
pp. 278-280 ◽  
Author(s):  
J. Y. Tsao ◽  
S. T. Picraux ◽  
P. S. Peercy ◽  
Michael O. Thompson

1983 ◽  
Vol 23 ◽  
Author(s):  
Philip H. Bucksbaum ◽  
Jeffrey Bokor

ABSTRACTDirect measurements of the liquid/solid interface veiocity have been made during both melt-in and regrowth for puised (20 psec) ultraviolet lasei irradiation or crystailine silicon. The regrowth velocity was 25 m/sec, independent or laser fluence. Regrowtn velocities of 50 to 100 m/sec are expected from heat diffusion calculations which neglect undercooling, whereas the inclusion of an appropriate undercooling curve brings the calculation into good agreement with the data. Tne liquid films produced were up to 40 nm thick and were fully amorphized on resoliaificaion.


2003 ◽  
Vol 107 (38) ◽  
pp. 10494-10505 ◽  
Author(s):  
Karen Malka ◽  
Jean Aubard ◽  
Michel Delamar ◽  
Vincent Vivier ◽  
Michel Che ◽  
...  

1996 ◽  
Vol 197 (Part_1_2) ◽  
pp. 67-96 ◽  
Author(s):  
D. Herein ◽  
A. Nagy ◽  
H. Schubert ◽  
G. Weinberg ◽  
E. Kitzelmann ◽  
...  

1998 ◽  
Author(s):  
Jinbin Wang ◽  
Zengshun Hu ◽  
Qiuxiang Liu ◽  
Guowei Yang

2013 ◽  
Vol 103 (8) ◽  
pp. 082111 ◽  
Author(s):  
Xiaojun Zhang ◽  
Dandan Wang ◽  
Matthew Beres ◽  
Lei Liu ◽  
Zhixun Ma ◽  
...  

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