Nanocrystallite preparation by pulsed-laser-induced reaction at liquid-solid interface

1998 ◽  
Author(s):  
Jinbin Wang ◽  
Zengshun Hu ◽  
Qiuxiang Liu ◽  
Guowei Yang
Keyword(s):  
Pulsed Laser ◽  
Solid Interface ◽  
Induced Reaction

Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy
Keyword(s):  
Electrical Conductance ◽  
Pulsed Laser ◽  
Solute Concentration ◽  
Atomic Percent ◽  
Supersaturated Solution ◽  
Solidification Velocity ◽  
Laser Melting ◽  
Solid Interface ◽  
Solution Studies ◽  
Nonequilibrium Segregation

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

Surface chemistry at the solid–solid interface: mechanically induced reaction pathways of C8 carboxylic acid monolayers on copper

2021 ◽  
Author(s):  
Resham Rana ◽  
Robert Bavisotto ◽  
Kaiming Hou ◽  
Wilfred T. Tysoe
Keyword(s):  
Carboxylic Acid ◽  
Surface Chemistry ◽  
Terminal Group ◽  
Reaction Pathways ◽  
Solid Interface ◽  
Induced Reaction

The rate of mechanochemical decomposition of C8-carboxylates on copper was found to be independent of the nature of the terminal group despite differences in the strength of binding to the moving counterface.

Direct measurements of liquid/solid interface kinetics during pulsed‐laser‐induced melting of aluminum

1986 ◽  
Vol 48 (4) ◽  
pp. 278-280 ◽  
Author(s):  
J. Y. Tsao ◽  
S. T. Picraux ◽  
P. S. Peercy ◽  
Michael O. Thompson
Keyword(s):  
Pulsed Laser ◽  
Solid Interface ◽  
Interface Kinetics ◽  
Direct Measurements

Measurement of Ultrafast Melting and Regrowth Velocities in Pulsed Laser Heated Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
Philip H. Bucksbaum ◽  
Jeffrey Bokor
Keyword(s):  
Laser Fluence ◽  
Pulsed Laser ◽  
Liquid Films ◽  
Heat Diffusion ◽  
Solid Interface ◽  
Direct Measurements ◽  
Laser Heated ◽  
Good Agreement

ABSTRACTDirect measurements of the liquid/solid interface veiocity have been made during both melt-in and regrowth for puised (20 psec) ultraviolet lasei irradiation or crystailine silicon. The regrowth velocity was 25 m/sec, independent or laser fluence. Regrowtn velocities of 50 to 100 m/sec are expected from heat diffusion calculations which neglect undercooling, whereas the inclusion of an appropriate undercooling curve brings the calculation into good agreement with the data. Tne liquid films produced were up to 40 nm thick and were fully amorphized on resoliaificaion.

scholarly journals Interface Velocity Transients During Melting of a-Si/C-Si Thin Films

1988 ◽  
Vol 100 ◽  
Author(s):  
J. Y. Tsao ◽  
M. J. Aziz ◽  
P. S. Peercy ◽  
M. O. Thompson
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Interface Temperature ◽  
Laser Melting ◽  
Systematic Procedure ◽  
Solid Interface ◽  
Amorphous Si ◽  
Si Films

ABSTRACTWe report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.

Effects of Arsenic Doping on the Solidification Dynamics of Pulsed-Laser-Melted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
Michael O. Thompson ◽  
P. S. Peercy ◽  
J. Y. Tsao
Keyword(s):  
Melting Temperature ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Surface Melting ◽  
Normal Surface ◽  
Arsenic Doping ◽  
Solid Interface ◽  
Conductance Technique ◽  
Velocity Changes

ABSTRACTThe effects of arsenic doping on the solidification dynamics during pulsed melting of silicon have been studied using the transient conductance technique. At As concentrations below 1 at.%, the incorporation of As into the Si lattice results in negligible differences in the solidification dynamics. Between 2 and 7 at.% As, however, the interface velocity is dramatically modified as the liquid-solid interface crosses the As containing region. These velocity changes are consistent with a reduced melting temperature for Si-As alloys. For concentrations of 11 at.% As, the depression in the melting temperature is sufficient to allow the surface to solidify while considerable melt remains buried within the sample. At 16 at.%, the melting temperature is drastically reduced and internal nucleation of melt occurs prior to normal surface melting.

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