Formation of silver particles and silver oxide plume nanocomposites upon pulsed-laser induced liquid-solid interface reaction

2004 ◽  
Vol 41 (4) ◽  
pp. 479-483 ◽  
Author(s):  
Q. X. Liu ◽  
C. X. Wang ◽  
G. W. Yang
Keyword(s):  
Silver Oxide ◽  
Interface Reaction ◽  
Pulsed Laser ◽  
Silver Particles ◽  
Solid Interface

Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy
Keyword(s):  
Electrical Conductance ◽  
Pulsed Laser ◽  
Solute Concentration ◽  
Atomic Percent ◽  
Supersaturated Solution ◽  
Solidification Velocity ◽  
Laser Melting ◽  
Solid Interface ◽  
Solution Studies ◽  
Nonequilibrium Segregation

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

Direct measurements of liquid/solid interface kinetics during pulsed‐laser‐induced melting of aluminum

1986 ◽  
Vol 48 (4) ◽  
pp. 278-280 ◽  
Author(s):  
J. Y. Tsao ◽  
S. T. Picraux ◽  
P. S. Peercy ◽  
Michael O. Thompson
Keyword(s):  
Pulsed Laser ◽  
Solid Interface ◽  
Interface Kinetics ◽  
Direct Measurements

Measurement of Ultrafast Melting and Regrowth Velocities in Pulsed Laser Heated Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
Philip H. Bucksbaum ◽  
Jeffrey Bokor
Keyword(s):  
Laser Fluence ◽  
Pulsed Laser ◽  
Liquid Films ◽  
Heat Diffusion ◽  
Solid Interface ◽  
Direct Measurements ◽  
Laser Heated ◽  
Good Agreement

ABSTRACTDirect measurements of the liquid/solid interface veiocity have been made during both melt-in and regrowth for puised (20 psec) ultraviolet lasei irradiation or crystailine silicon. The regrowth velocity was 25 m/sec, independent or laser fluence. Regrowtn velocities of 50 to 100 m/sec are expected from heat diffusion calculations which neglect undercooling, whereas the inclusion of an appropriate undercooling curve brings the calculation into good agreement with the data. Tne liquid films produced were up to 40 nm thick and were fully amorphized on resoliaificaion.

Nanostructured high valence silver oxide produced by pulsed laser deposition

2009 ◽  
Vol 255 (10) ◽  
pp. 5248-5251 ◽  
Author(s):  
D. Dellasega ◽  
A. Facibeni ◽  
F. Di Fonzo ◽  
V. Russo ◽  
C. Conti ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Silver Oxide ◽  
Pulsed Laser ◽  
Laser Deposition

Electron Transfer at the Gas−Solid Interface:  Reaction of Gas-Phase MoCl5with Vanadium Oxide Supported on Silica

2003 ◽  
Vol 107 (38) ◽  
pp. 10494-10505 ◽  
Author(s):  
Karen Malka ◽  
Jean Aubard ◽  
Michel Delamar ◽  
Vincent Vivier ◽  
Michel Che ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Vanadium Oxide ◽  
Gas Phase ◽  
Interface Reaction ◽  
Solid Interface

The Reaction of Molecular Oxygen with Silver at Technical Catalytic Conditions: Bulk Structural Consequences of a Gas-Solid Interface Reaction

1996 ◽  
Vol 197 (Part_1_2) ◽  
pp. 67-96 ◽  
Author(s):  
D. Herein ◽  
A. Nagy ◽  
H. Schubert ◽  
G. Weinberg ◽  
E. Kitzelmann ◽  
...  
Keyword(s):  
Molecular Oxygen ◽  
Interface Reaction ◽  
Solid Interface

Nanocrystallite preparation by pulsed-laser-induced reaction at liquid-solid interface

1998 ◽  
Author(s):  
Jinbin Wang ◽  
Zengshun Hu ◽  
Qiuxiang Liu ◽  
Guowei Yang
Keyword(s):  
Pulsed Laser ◽  
Solid Interface ◽  
Induced Reaction
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