Localized suppression of longitudinal-optical-phonon–exciton coupling in bent ZnO nanowires

2010 ◽  
Vol 21 (44) ◽  
pp. 445706 ◽  
Author(s):  
Bin Yan ◽  
Rui Chen ◽  
Weiwei Zhou ◽  
Jixuan Zhang ◽  
Handong Sun ◽  
...  
Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21867-21871 ◽  
Author(s):  
Hao Long ◽  
Xiang Peng ◽  
Jianxun Lu ◽  
Kebin Lin ◽  
Liqiang Xie ◽  
...  

Exciton–phonon interaction in quasi-2D material was investigated. It was shown that longitudinal optical phonon, rather than acoustic phonon-exciton coupling dominated the enhancement of exciton–phonon coupling strength.


2010 ◽  
Vol 114 (29) ◽  
pp. 12477-12480 ◽  
Author(s):  
Fang Fang ◽  
Dongxu Zhao ◽  
Binghui Li ◽  
Zhenzhong Zhang ◽  
Dezhen Shen ◽  
...  

2007 ◽  
Vol 102 (12) ◽  
pp. 123504 ◽  
Author(s):  
Ching-Ju Pan ◽  
Kuo-Feng Lin ◽  
Wei-Tse Hsu ◽  
Wen-Feng Hsieh

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.


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