Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low temperature and spontaneous plasma processing

2010 ◽  
Vol 22 (5) ◽  
pp. 055601 ◽  
Author(s):  
Debajyoti Das ◽  
Arup Samanta
2020 ◽  
Vol 222 ◽  
pp. 190-200
Author(s):  
Timothy T. Koh ◽  
Tingting Huang ◽  
Joseph Schwan ◽  
Pan Xia ◽  
Sean T. Roberts ◽  
...  

Non-thermal plasma synthesized silicon QDs are functionalized with aromatic and aliphatic ligands using a 2,2′-azobis(2-methylpropionitrile) AIBN radical initiator with hydrosilylation at 60 °C for photon upconversion.


2018 ◽  
Vol 82 ◽  
pp. 135-140 ◽  
Author(s):  
Karan Surana ◽  
Ibrahim T. Salisu ◽  
R.M. Mehra ◽  
Bhaskar Bhattacharya

2012 ◽  
Vol 116 (6) ◽  
pp. 3979-3987 ◽  
Author(s):  
I. E. Anderson ◽  
R. A. Shircliff ◽  
C. Macauley ◽  
D. K. Smith ◽  
B. G. Lee ◽  
...  

NANO ◽  
2019 ◽  
Vol 14 (06) ◽  
pp. 1950070
Author(s):  
Juan Yang ◽  
Jingling Li ◽  
Yanqing Zhu ◽  
Xueqing Xu ◽  
Xiudi Xiao ◽  
...  

We report a facile synthesis method on CuInSe2 (CISe)-based quantum dots (QDs) by using tri-[Formula: see text]-octylphosphine selenium (TOPSe) as selenide precursor, with assistance of oleylamine (OAm) and [Formula: see text]-dodecanethiol (DDT). We demonstrate that the OAm and DDT jointly contribute to the formation of the low-temperature-decomposable metal-sulfide clusters, and promote the QD nucleation at relatively low temperature range of 180–200∘C. Furthermore, to improve fluorescence property, Zn-doping and ZnSe coating are simultaneously carried out. The obtained deep-red ZnCISe/ZnSe QDs possess higher quantum yield of 65% at wavelength of 670[Formula: see text]nm, which is in the best performance range ever reported. Then, we investigate the improvement mechanism, where the sufficient Zn replacement of In sites is the crucial factor. This modified core–shell structure provides two benefits, on the one hand, the enhancement on intrinsic defect-related recombination, and the other hand, the improved core–shell interface that reduces the nonradiative recombination.


2018 ◽  
Vol 124 (4) ◽  
pp. 044302 ◽  
Author(s):  
Bo Li ◽  
Weilong Liu ◽  
Lin Yan ◽  
Xiaojun Zhu ◽  
Yanqiang Yang ◽  
...  

2021 ◽  
Vol 125 (40) ◽  
pp. 22354-22359
Author(s):  
Da Huang ◽  
He Wang ◽  
Wei Zhao ◽  
Rucheng Dai ◽  
Zhongping. Wang ◽  
...  

2016 ◽  
Vol 18 (23) ◽  
pp. 15697-15710 ◽  
Author(s):  
Bibhuti Bhusan Sahu ◽  
Yongyi Yin ◽  
Jeon Geon Han ◽  
Masaharu Shiratani

The design of advanced plasma processes by plasma and radical control is essential for the controlled low-temperature deposition of different size QDs.


Sign in / Sign up

Export Citation Format

Share Document