Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

2016 ◽  
Vol 27 (32) ◽  
pp. 325202 ◽  
Author(s):  
Pil Ju Ko ◽  
Abdelkader Abderrahmane ◽  
Tsukasa Takamura ◽  
Nam-Hoon Kim ◽  
Adarsh Sandhu
Keyword(s):  
Optoelectronic Properties ◽  
Thickness Dependence

Thickness dependence of structure and optoelectronic properties of In2O3:Mo films prepared by spray pyrolysis

2009 ◽  
Vol 518 (4) ◽  
pp. 1271-1274 ◽  
Author(s):  
P. Prathap ◽  
N. Revathi ◽  
K.T. Ramakrishna Reddy ◽  
R.W. Miles
Keyword(s):  
Spray Pyrolysis ◽  
Optoelectronic Properties ◽  
Thickness Dependence

Thickness dependence of optoelectronic properties in ALD grown ZnO thin films

2014 ◽  
Vol 289 ◽  
pp. 27-32 ◽  
Author(s):  
Trilok Singh ◽  
Thomas Lehnen ◽  
Tessa Leuning ◽  
Diptiranjan Sahu ◽  
Sanjay Mathur
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Thickness Dependence ◽  
Zno Thin Films

Thickness Dependence of Optoelectronic Properties of Molybdenum Diselenide-Based Nanodevices

2019 ◽  
Vol 48 (11) ◽  
pp. 7025-7030
Author(s):  
Mohamed Malik Achouri ◽  
Abdelkader Tab ◽  
Abdelkader Abderrahmane ◽  
Dong Jin Lee ◽  
Jong-Min Oh ◽  
...  
Keyword(s):  
Optoelectronic Properties ◽  
Thickness Dependence ◽  
Molybdenum Diselenide

FILM THICKNESS DEPENDENCE OF HEAT TRANSMISSION INTO HELIUM

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-825-C6-827
Author(s):  
P. Taborek ◽  
M. Sinvani ◽  
M. Weimer ◽  
D. Goodstein
Keyword(s):  
Film Thickness ◽  
Thickness Dependence ◽  
Heat Transmission

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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