AbstractLocalized surface plasmon resonance (LSPR) was performed in the deep ultraviolet (UVC) region with Al nanohemisphere structures fabricated by means of a simple method using a combination of vapor deposition, sputtering, and thermal annealing without top-down nanofabrication technology such as electron beam lithography. The LSPR in the UV region was obtained and tuned by the initial metal film thickness, annealing temperature, and dielectric spacer layer thickness. Moreover, we achieved a flexible tuning of the LSPR in a much deeper UVC region below 200 nm using a nanohemisphere on a mirror (NHoM) structure. NHoM is a structure in which a metal nanohemisphere is formed on a metal substrate that is interposed with an Al2O3 thin film layer. In the experimental validation, Al and Ga were used for the metal hemispheres. The LSPR spectrum of the NHoM structures was split into two peaks, and the peak intensities were enhanced and sharpened. The shorter branch of the LSPR peak appeared in the UVC region below 200 nm. Both the peak intensities and linewidth were flexibly tuned by the spacer thickness. This structure can contribute to new developments in the field of deep UV plasmonics.
Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures
