Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

2017 ◽  
Vol 50 (24) ◽  
pp. 245101 ◽  
Author(s):  
Feng Wu ◽  
Haiding Sun ◽  
Idris A AJia ◽  
Iman S Roqan ◽  
Daliang Zhang ◽  
...  
2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.


2008 ◽  
Vol 47 (2) ◽  
pp. 839-842 ◽  
Author(s):  
Muthusamy Senthil Kumar ◽  
Jae Young Park ◽  
Yong Seok Lee ◽  
Sang Jo Chung ◽  
Chang-Hee Hong ◽  
...  

2013 ◽  
Vol 34 (1) ◽  
pp. 66-72
Author(s):  
赵芳 ZHAO Fang ◽  
张运炎 ZHANG Yun-yan ◽  
宋晶晶 SONG Jing-jing ◽  
丁彬彬 DING Bin-bin ◽  
范广涵 FAN Guang-han

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