scholarly journals Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization

2020 ◽  
pp. 2000464
Author(s):  
Gwénolé Jacopin ◽  
Christian Frankerl ◽  
Nadine Tillner ◽  
Matthew John Davies ◽  
Georg Rossbach ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Growth Substrate ◽  
Carrier Localization

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth

2008 ◽  
Vol 47 (2) ◽  
pp. 839-842 ◽  
Author(s):  
Muthusamy Senthil Kumar ◽  
Jae Young Park ◽  
Yong Seok Lee ◽  
Sang Jo Chung ◽  
Chang-Hee Hong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells

2013 ◽  
Vol 34 (1) ◽  
pp. 66-72
Author(s):  
赵芳 ZHAO Fang ◽  
张运炎 ZHANG Yun-yan ◽  
宋晶晶 SONG Jing-jing ◽  
丁彬彬 DING Bin-bin ◽  
范广涵 FAN Guang-han
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting
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