Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode

2019 ◽  
Vol 53 (2) ◽  
pp. 025104
Author(s):  
Wei-Chen Huang ◽  
Shin-Ping Huang ◽  
Po-Hsun Chen ◽  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Transparent Electrode ◽  
Access Memory ◽  
Forming Process ◽  
Uv Illumination ◽  
Resistance Random Access Memory

Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory

2017 ◽  
Vol 10 (5) ◽  
pp. 054101 ◽  
Author(s):  
Cheng-Hsien Wu ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Tian-Jian Chu ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Forming Process ◽  
Low Resistance ◽  
Resistance Random Access Memory

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Resistance random access memory switching mechanism

2007 ◽  
Vol 101 (2) ◽  
pp. 024517 ◽  
Author(s):  
Sheng T. Hsu ◽  
Tingkai Li ◽  
Nobuyoshi Awaya
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Memory Switching ◽  
Resistance Random Access Memory

Performance and characteristics of double layer porous silicon oxide resistance random access memory

2013 ◽  
Vol 102 (25) ◽  
pp. 253509 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Double Layer ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

2014 ◽  
Vol 35 (6) ◽  
pp. 630-632 ◽  
Author(s):  
Rui Zhang ◽  
Tai-Fa Young ◽  
Min-Chen Chen ◽  
Hsin-Lu Chen ◽  
Shu-Ping Liang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

scholarly journals Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

2008 ◽  
Vol 103 (1) ◽  
pp. 013706 ◽  
Author(s):  
M. J. Lee ◽  
Y. Park ◽  
S. E. Ahn ◽  
B. S. Kang ◽  
C. B. Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Electrical Analysis
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