Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes

2020 ◽  
Vol 53 (15) ◽  
pp. 155104
Author(s):  
Ding Li ◽  
Liefeng Feng ◽  
Wei Yang ◽  
Xiufang Yang ◽  
Xiaodong Hu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Laser ◽  
Fermi Energy ◽  
Energy Levels ◽  
Laser Diodes ◽  
Semiconductor Laser Diodes ◽  
Multi Quantum Well

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

Light gain amplification in microcavity organic semiconductor laser diodes under electrical pumping

2017 ◽  
Vol 62 (24) ◽  
pp. 1637-1638 ◽  
Author(s):  
Jie Lin ◽  
Yongsheng Hu ◽  
Ying Lv ◽  
Xiaoyang Guo ◽  
Xingyuan Liu
Keyword(s):  
Semiconductor Laser ◽  
Organic Semiconductor ◽  
Laser Diodes ◽  
Semiconductor Laser Diodes ◽  
Organic Semiconductor Laser

Noise in voltage-biased scaled semiconductor laser diodes

1999 ◽  
Vol 43 (1) ◽  
pp. 33-39 ◽  
Author(s):  
S.M.K. Thiyagarajan ◽  
A.F.J. Levi
Keyword(s):  
Semiconductor Laser ◽  
Laser Diodes ◽  
Semiconductor Laser Diodes

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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