CIGS Photovoltaics: Reviewing a Evolving Paradigm

Abstract Copper indium selenide chalcopyrite-structure alloys with gallium (CIGS) are unique among the highest performing photovoltaic (PV) semiconductor technologies. They are structurally disordered, nonstoichiometric materials that have been engineered to achieve remarkably low bulk nonradiative recombination levels. Nevertheless, their performance can be further improved. This review adopts a fundamental thermodynamic perspective to comparatively assess the root causes of present limitations on CIGS PV performance. The topics of selectivity and passivation of contacts to CIGS and its multinary alloys are covered, highlighting pathways to maximizing the electrochemical potential between those contacts under illumination. An overview of absorber growth methods and resulting properties is also provided. We recommend that CIGS researchers consider strategies that have been successfully implemented in the more mature wafer-based GaAs and Si PV device technologies, based on the paradigm of an idealized PV device design using an isotropic absorber with minimal nonradiative recombination, maximal light trapping, and both electron-selective and hole-selective passivated contacts. We foresee that CIGS technology will reach the 25% efficiency level within the next few years through enhanced collection and reduced recombination. To significantly impact power-generation applications, cost-effective, manufacturable solutions are also essential.

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Photoelectrochemical Behaviour of Copper Indium Selenide Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.343 ◽

2013 ◽

Vol 678 ◽

pp. 343-348

Author(s):

Venkatapathy Chitra ◽

Kalimuthu Ananthi ◽

S. Vasantha

Keyword(s):

Thin Films ◽

Current Density ◽

Duty Cycle ◽

Short Circuit ◽

Indium Selenide ◽

Open Circuit ◽

Chalcopyrite Structure ◽

Copper Indium Selenide ◽

Duty Cycles ◽

Copper Indium

Copper Indium Selenide (CIS) thin films were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 – 50 %. Deposition current density was kept constant at 5 ma cm-2 in the present work. The total deposition time was 60 min. The precursors used were AR grade 0.3 M of each CuCl2 and InCl3, along with 0.2 M of SeO2. Thickness of the films estimated by Mitutoyo surface profilometer varied in the range of 0.8 to 1.2 μm with increase of duty cycle. XRD patterns of CIS films deposited at different duty cycles exhibit the chalcopyrite structure. Composition of the films indicated Cu/In ratio is greater than 1. Optical absorption studies indicated a direct energy band gap of 0.95 eV. Surface morphology of the films indicated that the grain size increased from 15 nm to 40 nm as the duty cycle increased. It is observed that as the duty cycle increases, the resistvity increases from 1.0 ohm cm to 10 ohm cm. The films were used as photoelectrodes in 0.5 M polysulphide redox electrolyte (0.5 M each Na2S, NaOH, S). At 60 mW cm-2, an open circuit voltage of 0.465 V and short circuit current density of 3.87 mA cm-2 were observed for the films deposited at 50 % duty cycle.

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Quantized electronic transitions in electrodeposited copper indium selenide nanocrystalline homojunctions

Scientific Reports ◽

10.1038/s41598-021-83526-0 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Shalini Menezes ◽

Anura P. Samantilleke ◽

Bryon W. Larson

Keyword(s):

Scale Up ◽

Indium Selenide ◽

State Density ◽

Single Step ◽

Copper Indium Selenide ◽

Ambient Atmosphere ◽

Inorganic Semiconductors ◽

3 Dimensional ◽

Roll To Roll ◽

Copper Indium

AbstractPairing semiconductors with electrochemical processing offers an untapped opportunity to create novel nanostructures for practical devices. Here we report the results of one such pairing: the in-situ formation of highly-doped, interface-matched, sharp nanocrystalline homojunctions (NHJs) with single step electrodeposition of two copper-indium-selenide (CISe) compounds on flexible foil. It produces a homogenous film, comprising inherently ordered, 3-dimensional interconnected network of pn-CISe NHJs. These CISe NHJs exhibit surprising non-linear emissions, quantized transitions, large carrier mobility, low trap-state-density, long carrier lifetime and possible up-conversion. They facilitate efficient separation of minority carriers, reduce recombination and essentially function like quantum materials. This approach mitigates the material issues and complex fabrication of incumbent nanoscale heterojunctions; it also overcomes the flexibility and scale-up challenges of conventional planar pn junctions. The self-stabilized CISe NHJ film can be roll-to-roll processed in ambient atmosphere, thus providing a promising platform for a range of optoelectronic technologies. This concept exemplified by CISe compounds can be adapted to create nano-scale pn junctions with other inorganic semiconductors.

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Pulse Electrodeposited Copper Indium Selenide Films

ECS Meeting Abstracts ◽

10.1149/ma2011-01/26/1546 ◽

2011 ◽

Keyword(s):

Indium Selenide ◽

Copper Indium Selenide ◽

Copper Indium

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Highly Luminescent, Size- and Shape-Tunable Copper Indium Selenide Based Colloidal Nanocrystals

Chemistry of Materials ◽

10.1021/cm402306q ◽

2013 ◽

Vol 25 (18) ◽

pp. 3753-3757 ◽

Cited By ~ 78

Author(s):

Olesya Yarema ◽

Deniz Bozyigit ◽

Ian Rousseau ◽

Lea Nowack ◽

Maksym Yarema ◽

...

Keyword(s):

Indium Selenide ◽

Copper Indium Selenide ◽

Colloidal Nanocrystals ◽

Size And Shape ◽

Copper Indium

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Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

Electronics ◽

10.3390/electronics8060645 ◽

2019 ◽

Vol 8 (6) ◽

pp. 645 ◽

Cited By ~ 2

Author(s):

Prasanna D. Patil ◽

Sujoy Ghosh ◽

Milinda Wasala ◽

Sidong Lei ◽

Robert Vajtai ◽

...

Keyword(s):

Ionic Liquid ◽

Low Power ◽

Double Layer ◽

Electric Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Indium Selenide ◽

Copper Indium Selenide ◽

Two Dimensional ◽

Copper Indium

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

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