scholarly journals Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov–de Haas oscillations

2019 ◽  
Vol 31 (11) ◽  
pp. 115701 ◽  
Author(s):  
S B Bobin ◽  
A T Lonchakov ◽  
V V Deryushkin ◽  
V N Neverov
Keyword(s):  
Phase Shift ◽  
Effective Mass ◽  
Electron Mobility ◽  
Shubnikov De Haas Oscillations ◽  
Nontrivial Topology

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

Order-disorder transition-induced band nestification in AgBiSe2–CuBiSe2 solid solutions for superior thermoelectric performance

2021 ◽  
Author(s):  
Hanhwi Jang ◽  
Stanley Abbey ◽  
Woo Hyun Nam ◽  
Brakowaa Frimpong ◽  
Chien Viet Nguyen ◽  
...  
Keyword(s):  
Effective Mass ◽  
High Temperatures ◽  
Solid Solutions ◽  
Electron Mobility ◽  
Thermoelectric Performance ◽  
Disorder Transition

The AgBiSe2–CuBiSe2 system shows band nestification at high temperatures, resulting in heavy DOS effective mass while preserving electron mobility.

HIGH MAGNETIC FIELD IN THz PLASMA WAVE DETECTION BY HIGH ELECTRON MOBILITY TRANSISTORS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 3029-3034 ◽  
Author(s):  
M. SAKOWICZ ◽  
J. ŁUSAKOWSKI ◽  
K. KARPIERZ ◽  
M. GRYNBERG ◽  
G. VALUSIS
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Plasma ◽  
High Electron ◽  
Resonance Transition ◽  
Transistor Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations

The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs / AlGaAs and GaN / AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative d S/ d UGS. Shubnikov - de-Haas oscillations (SdHO) of both S and d S/ d UGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and d S/ d UGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs / GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

2012 ◽  
Vol 46 (4) ◽  
pp. 484-490 ◽  
Author(s):  
D. S. Ponomarev ◽  
I. S. Vasil’evskii ◽  
G. B. Galiev ◽  
E. A. Klimov ◽  
R. A. Khabibullin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Electron Mobility

scholarly journals Осцилляции микроволнового магнитопоглощения в кристаллах HgSe с примесью Fe

2018 ◽  
Vol 52 (8) ◽  
pp. 847
Author(s):  
А.И. Вейнгер ◽  
И.В. Кочман ◽  
В.И. Окулов ◽  
М.Д. Андрийчук ◽  
Л.Д. Паранчич
Keyword(s):  
Fermi Level ◽  
Effective Mass ◽  
Microwave Radiation ◽  
Impurity Concentration ◽  
Quantum Limit ◽  
Radiation Absorption ◽  
Temperature Dependences ◽  
Shubnikov De Haas Oscillations ◽  
Oscillation Frequencies ◽  
Fe Impurity

AbstractMagnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.

Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1−XSb quantum wells

2011 ◽  
Vol 62 (1) ◽  
pp. 138-141 ◽  
Author(s):  
Aneesh Nainani ◽  
Toshifumi Irisawa ◽  
Brian R. Bennett ◽  
J. Brad Boos ◽  
Mario G. Ancona ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Hole Effective Mass ◽  
Shubnikov De Haas Oscillations
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