The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

2021 ◽  
Vol 32 (13) ◽  
pp. 135401
Author(s):  
Huimin Wang ◽  
Donghai Wei ◽  
Junfei Duan ◽  
Zhenzhen Qin ◽  
Guangzhao Qin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
Aluminum Nitride ◽  
High Thermal Conductivity ◽  
Two Dimensional

Monolayer and bilayer polyaniline C3N: two-dimensional semiconductors with high thermal conductivity

Nanoscale ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 4301-4310 ◽  
Author(s):  
Yang Hong ◽  
Jingchao Zhang ◽  
Xiao Cheng Zeng
Keyword(s):  
Thermal Conductivity ◽  
Thermal Transport ◽  
Md Simulation ◽  
Transport Processes ◽  
High Thermal Conductivity ◽  
Two Dimensional

Lateral and flexural thermal transport processes in monolayer and bilayer C3N are systematically investigated using MD simulation.

MXenes for Gas and Biological Sensor

2021 ◽  
pp. 107-138
Keyword(s):  
Thermal Conductivity ◽  
Catalytic Activity ◽  
Surface Area ◽  
Large Surface Area ◽  
High Thermal Conductivity ◽  
Two Dimensional ◽  
Gas Removal ◽  
Research Platform ◽  
Experimental Approaches ◽  
Biosensor Applications

Recent advancement of two dimensional MXene nanomaterial offers promise in gases and biosensor areas owing to its large surface area, high thermal conductivity, remarkable safety and excellent catalytic activity traits. The current chapter aimed to review the fundamental and technological aspects of MXenes, including myriad synthesis techniques and structural as well as electronic characteristics of these compounds. The features elucidated in the subsequent sections, examined by both theoretical and experimental approaches and potentialities of MXenes in the gas removal and biosensor applications. Several challenges and exciting future opportunities of this research platform are lastly summarized.

scholarly journals Silver Nanoparticle-Deposited Aluminum Oxide Nanoparticle as Fillers for Epoxy Composites with High Thermal Conductivity

2018 ◽  
Vol 27 (6) ◽  
pp. 096369351802700
Author(s):  
Tao Huang ◽  
Yimin Yao ◽  
Gang Zhang ◽  
Fanling Meng
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Silver Nanoparticle ◽  
Ag Nanoparticles ◽  
Thermal Contact Resistance ◽  
Epoxy Composite ◽  
Thermal Contact ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Oxide Nanoparticle

With the development of polymer-filled composites, the demand of high thermal conductivity materials is much attractive than ever. However, the process of a common method to improve thermal conductivity of composites is considerably complicated. The aim of this study is to investigate thermal conductivity of epoxy filled silver nanoparticle deposited aluminum nitride nanoparticles with relatively convenient process. We found that the thermal conductivities of composites filled with AlN/Ag nanoparticles are effectively enhanced, which is enormously increased from 0.48 Wm-1K-1(1.88 vol%) to 3.66 Wm-1K-1 (19.54 vol%). This can be ascribed to the bridging connections of silver nanoparticle among aluminum nitride nanoparticles. In addition, the thermal contact resistance of the epoxy composites filler with AlN/Ag nanoparticles is decreased, which is proved by the fitting measured thermal conductivity of epoxy composite with one physical model. We believe the finding has great potential for any microelectronic application.

Metallization Behavior in Aluminum Nitride Electronic Packages

1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Aluminum Nitride ◽  
High Density ◽  
High Thermal Conductivity ◽  
Electronic Packages ◽  
Oxide Ceramics ◽  
Chemical Behavior ◽  
Hermetic Seal ◽  
Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

scholarly journals High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

2007 ◽  
Vol 48 (10) ◽  
pp. 2782-2786 ◽  
Author(s):  
Hiroyuki Shibata ◽  
Yoshio Waseda ◽  
Hiromichi Ohta ◽  
Kazumasa Kiyomi ◽  
Kenji Shimoyama ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
High Thermal Conductivity

An Exact Solution to Steady Heat Conduction in a Two-Dimensional Annulus on a One-Dimensional Fin: Application to Frosted Heat Exchangers With Round Tubes

2005 ◽  
Vol 128 (4) ◽  
pp. 397-404 ◽  
Author(s):  
A. D. Sommers ◽  
A. M. Jacobi
Keyword(s):  
Thermal Conductivity ◽  
Analytical Solution ◽  
High Thermal Conductivity ◽  
Two Dimensional ◽  
One Dimensional ◽  
Low Thermal Conductivity ◽  
Fin Efficiency ◽  
Coated Metal ◽  
The One ◽  
Term Approximation

The fin efficiency of a high-thermal-conductivity substrate coated with a low-thermal-conductivity layer is considered, and an analytical solution is presented and compared to alternative approaches for calculating fin efficiency. This model is appropriate for frost formation on a round-tube-and-fin metallic heat exchanger, and the problem can be cast as conduction in a composite two-dimensional circular cylinder on a one-dimensional radial fin. The analytical solution gives rise to an eigenvalue problem with an unusual orthogonality condition. A one-term approximation to this new analytical solution provides fin efficiency calculations of engineering accuracy for a range of conditions, including most frosted-coated metal fins. The series solution and the one-term approximation are of sufficient generality to be useful for other cases of a low-thermal-conductivity coating on a high-thermal-conductivity substrate.

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