Controlled synthesis of tungsten trioxide with globular clusters constructed of nanoplates by rapid breakdown anodization

2021 ◽  
Author(s):  
Shizhao Wu ◽  
Xiaofeng Lu ◽  
Hanlu Gao ◽  
Shitao Zheng ◽  
Jing Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Tungsten Trioxide ◽  
Globular Clusters ◽  
Dielectric Breakdown ◽  
Film Structure ◽  
Breakdown Field ◽  
Controlled Synthesis ◽  
Tungsten Foil ◽  
Effect Of The Composition ◽  
Rapid Breakdown Anodization

Abstract Herein, the electrochamical synthesis of tungsten trioxide (WO3·H2O) with globular clusters constructed of nanoplates is demonstrated. On applying a breakdown anodization potential of 25 V at 50 °C, tungsten foil anode is efficiently electro-oxidized into WO3 globular clusters constructed of nanoplates powder, instead of a thin film structure as conventional anodization occurs. The resulting globular clusters were characterized using SEM, TEM, and XRD. The effect of the composition of electrolyte on the breakdown anodization of the W substrate is discussed. And we suggest that the growth of the nanoplates is initiated by localized anodic dielectric breakdown, followed by a effectively crystal growth in electrolyte at high breakdown field.

Fabrication of on-chip barium strontium titanate capacitors by metallo-organic decomposition

1998 ◽  
Vol 13 (6) ◽  
pp. 1548-1552 ◽  
Author(s):  
Antonio B. Catalan ◽  
Shih-Chia Chang ◽  
Roger J. Poisson ◽  
William J. Baney ◽  
John E. Benci
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Dielectric Breakdown ◽  
Deposition Process ◽  
Single Step ◽  
Breakdown Field ◽  
Organic Thin Film ◽  
Barium Strontium ◽  
On Chip

Metallo-organic thin film decomposition (MOD) was used in forming barium strontium titanate (BST) thin film capacitors on phosphorus doped polysilicon films deposited on 4 in. silicon wafers. A single step deposition process yielded highly uniform, crack-free BST films ranging up to 0.25 εm in thickness and having various step heights and dimensional area. Scanning electron microscopy (SEM) showed very good step coverage and planarization of the BST. The capacitors had capacitance densities above 200 nF/cm2, leakage current densities less than 1.55 εA/cm2 at a bias voltage of 10 V, and a dielectric breakdown field above 1 MVycm. Small temperature coefficients of capacitance and dissipation (tan δ) were also observed. Frequency response measurements were made using the BST capacitors and on-chip resistors in low pass and high pass circuit configurations. A plot of relative gain and phase angle versus frequency showed excellent agreement with predicted results.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

OPTIMIZATION OF THIN FILM STRUCTURE Ge2Sb2Te5 FOR OPTICAL SWITCHES

2018 ◽  
Vol 66-2 ◽  
pp. 2-8 ◽  
Author(s):  
N. V. Vishnyakov ◽  
◽  
N. M. Tolkach ◽  
P. S. Provotorov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Film Structure ◽  
Optical Switches ◽  
Thin Film Structure

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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