Suppression of reverse drain induced barrier lowering in negative capacitance FDSOI field effect transistor using oxide charge trapping layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/abb5e4 ◽

2020 ◽

Vol 35 (12) ◽

pp. 125003

Author(s):

Kitae Lee ◽

Sihyun Kim ◽

Jong-Ho Lee ◽

Daewoong Kwon ◽

Byung-Gook Park

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Trapping ◽

Negative Capacitance ◽

Oxide Charge ◽

Effect Transistor

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Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Applied Physics Letters ◽

10.1063/5.0052129 ◽

2021 ◽

Vol 118 (19) ◽

pp. 192904

Author(s):

Carlotta Gastaldi ◽

Matteo Cavalieri ◽

Ali Saeidi ◽

Eamon O'Connor ◽

Sadegh Kamaei ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Si Doped ◽

Effect Transistor

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Gate-Normal Negative Capacitance Tunnel Field-Effect Transistor (TFET) with Channel Doping Engineering

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2021.3068572 ◽

2021 ◽

pp. 1-1

Author(s):

Hyun Woo Kim ◽

Daewoong Kwon

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Field and temperature effects on oxide charge detrapping in a metal–oxide–semiconductor field effect transistor by measuring a subthreshold current transient

Applied Physics Letters ◽

10.1063/1.119730 ◽

1997 ◽

Vol 71 (8) ◽

pp. 1068-1070 ◽

Author(s):

Lu-Ping Chiang ◽

N. K. Zous ◽

Tahui Wang ◽

T. E. Chang ◽

K. Y. Shen ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Effects ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Current Transient ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Subthreshold Current ◽

Effect Transistor

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Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node

Microelectronics Journal ◽

10.1016/j.mejo.2022.105363 ◽

2022 ◽

pp. 105363

Author(s):

Weifeng Lü ◽

Xianlong Chen ◽

Bo Liu ◽

Ziqiang Xie ◽

Mengxue Guo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Negative Capacitance ◽

Comprehensive Performance ◽

Effect Transistor

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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870051 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870051 ◽

Author(s):

Luqi Tu ◽

Xudong Wang ◽

Jianlu Wang ◽

Xiangjian Meng ◽

Junhao Chu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Effect Transistor

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High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

Applied Physics Letters ◽

10.1063/1.4947576 ◽

2016 ◽

Vol 108 (17) ◽

pp. 173301 ◽

Author(s):

Lanyi Xiang ◽

Jun Ying ◽

Jinhua Han ◽

Letian Zhang ◽

Wei Wang

Keyword(s):

Active Layer ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistor ◽

Charge Trapping ◽

Organic Field Effect Transistor ◽

Effect Transistor ◽

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Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097292 ◽

2021 ◽

pp. 1-4

Author(s):

Sihyun Kim ◽

Kitae Lee ◽

Jong-Ho Lee ◽

Byung-Gook Park ◽

Daewoong Kwon

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Nickel Silicide ◽

Negative Capacitance ◽

Effect Transistor

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High Performance Negative Capacitance Field-Effect Transistor Featuring Low Off-State Current, High On/Off Current Ratio, and Steep Sub-60 mV/dec Swing

10.7567/ssdm.2019.ps-1-24 ◽

2019 ◽

Author(s):

C. Liu ◽

H.-H. Chen ◽

Y.-C. Tung ◽

W.-C. Wang ◽

B.-Y. Shih ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Current Ratio ◽

Effect Transistor

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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Chinese Physics B ◽

10.1088/1674-1056/28/8/086801 ◽

2019 ◽

Vol 28 (8) ◽

pp. 086801 ◽

Author(s):

Wen-Ting Zhang ◽

Fen-Xia Wang ◽

Yu-Miao Li ◽

Xiao-Xing Guo ◽

Jian-Hong Yang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Trapping ◽

Floating Gate ◽

Organic Field Effect Transistor ◽

Floating Gate Memory ◽

Effect Transistor

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High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab6420 ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGA01

Author(s):

Chien Liu ◽

Hsuan-Han Chen ◽

Yi-Chun Tung ◽

Wei-Chun Wang ◽

Zhong-Ying Huang ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Current Ratio ◽

Effect Transistor

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