Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor
Keyword(s):
Si Doped
◽
2018 ◽
Vol 4
(11)
◽
pp. 1870051
◽
Keyword(s):
Keyword(s):
2019 ◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):