Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe2df ◽

2021 ◽

Vol 36 (4) ◽

pp. 045019

Author(s):

Samriddhi Raut ◽

Khushwant Sehra ◽

Meena Mishra ◽

D S Rawal ◽

Mridula Gupta ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Frequency Power

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

IET Circuits Devices & Systems ◽

10.1049/cds2.12075 ◽

2021 ◽

Author(s):

Khizar Hayat ◽

Salahuddin Zafar ◽

Tariq Mehmood ◽

Busra Cankaya Akoglu ◽

Ekmel Ozbay ◽

...

Keyword(s):

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Radar Applications ◽

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A 50 W dual‐band high‐efficiency gallium nitride high electron mobility transistor power amplifier with three‐stage L‐type DC bias circuit at 1.8 and 2.6 GHz

Microwave and Optical Technology Letters ◽

10.1002/mop.33028 ◽

2021 ◽

Author(s):

Jong‐Heon Kim ◽

Dong‐Ki Jeong ◽

Ji‐Yeon Kim ◽

Young‐Rak Choi

Keyword(s):

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

High Efficiency ◽

High Electron Mobility Transistor ◽

Dual Band ◽

High Electron ◽

High Electron Mobility ◽

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Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3482335 ◽

2010 ◽

Vol 28 (5) ◽

pp. L47-L51 ◽

Author(s):

C. F. Lo ◽

C. Y. Chang ◽

B. H. Chu ◽

H.-Y. Kim ◽

J. Kim ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

2019 International Conference on Advanced Technologies for Communications (ATC) ◽

10.1109/atc.2019.8924506 ◽

2019 ◽

Author(s):

Dao Dinh Ha ◽

Trung Tran Tuan ◽

Vladislav Volcheck ◽

Viktor Stempitsky

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Thermal Simulation ◽

High Electron ◽

High Electron Mobility

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Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Journal of Diabetes Science and Technology ◽

10.1177/193229681000400122 ◽

2010 ◽

Vol 4 (1) ◽

pp. 171-179 ◽

Author(s):

Byung Hwan Chu ◽

Byoung Sam Kang ◽

Sheng Chun Hung ◽

Ke Hung Chen ◽

Fan Ren ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Aluminum Gallium Nitride ◽

Exhaled Breath Condensate ◽

High Electron Mobility Transistor ◽

Glucose Detection ◽

Exhaled Breath ◽

High Electron ◽

High Electron Mobility ◽

Breath Condensate

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Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1518 ◽

2014 ◽

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4929544 ◽

2015 ◽

Vol 33 (5) ◽

pp. 051212 ◽

Author(s):

Ling Lv ◽

Xiaohua Ma ◽

He Xi ◽

Linyue Liu ◽

Yanrong Cao ◽

...

Keyword(s):

Theoretical Analysis ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

10.1117/12.2076676 ◽

2015 ◽

Author(s):

F. Ren ◽

Y.-H. Hwang ◽

S. J. Pearton ◽

Erin Patrick ◽

Mark E. Law

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

physica status solidi (a) ◽

10.1002/pssa.201900717 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900717

Author(s):

Chunlei Wu ◽

Hansheng Ye ◽

Benjamin Grisafe ◽

Suman Datta ◽

Patrick Fay

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Polarization Switching ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

High Electron ◽

High Electron Mobility

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Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3141 ◽

2021 ◽

Author(s):

Kai‐Jun Pai ◽

Chang‐Hua Lin

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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