Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1518 ◽

2014 ◽

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

10.1117/12.2076676 ◽

2015 ◽

Author(s):

F. Ren ◽

Y.-H. Hwang ◽

S. J. Pearton ◽

Erin Patrick ◽

Mark E. Law

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Transactions ◽

10.1149/06104.0117ecst ◽

2014 ◽

Vol 61 (4) ◽

pp. 117-126

Author(s):

S. Li ◽

Y.-H. Hwang ◽

Y.-L. Hsieh ◽

F. Ren ◽

S. J. Pearton ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

Applied Physics Letters ◽

10.1063/1.4866858 ◽

2014 ◽

Vol 104 (8) ◽

pp. 082106 ◽

Author(s):

Ya-Hsi Hwang ◽

Shun Li ◽

Yueh-Ling Hsieh ◽

Fan Ren ◽

Stephen J. Pearton ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2309 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2309-2311 ◽

Author(s):

Shuichi Yagi ◽

Mitsuaki Shimizu ◽

Hajime Okumura ◽

Hiromichi Ohashi ◽

Yoshiki Yano ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4891629 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051203 ◽

Author(s):

Travis Anderson ◽

Andrew Koehler ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Shun Li ◽

...

Keyword(s):

Thermal Resistance ◽

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4864070 ◽

2014 ◽

Vol 32 (2) ◽

pp. 021203 ◽

Author(s):

Shun Li ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Lei Lei ◽

Fan Ren ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe2df ◽

2021 ◽

Vol 36 (4) ◽

pp. 045019

Author(s):

Samriddhi Raut ◽

Khushwant Sehra ◽

Meena Mishra ◽

D S Rawal ◽

Mridula Gupta ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Frequency Power

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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Chinese Physics B ◽

10.1088/1674-1056/23/7/077304 ◽

2014 ◽

Vol 23 (7) ◽

pp. 077304 ◽

Author(s):

Min-Han Mi ◽

Kai Zhang ◽

Xing Chen ◽

Sheng-Lei Zhao ◽

Chong Wang ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage ◽

Double Heterojunction ◽

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Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

Applied Physics Express ◽

10.7567/apex.7.071002 ◽

2014 ◽

Vol 7 (7) ◽

pp. 071002 ◽

Author(s):

ShengLei Zhao ◽

JunShuai Xue ◽

Peng Zhang ◽

Bin Hou ◽

Jun Luo ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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