DC characterization of advanced fine-filamentary MgB2 superconducting wires.

Abstract MgB2 wires with 114, 192 and 342 filaments of size 14-19 µm manufactured by HyperTech Research, Inc. have been subjected to low temperature DC measurements. R(T), I-V characteristics, critical currents and stress and strain tolerances of these wires differing by filament architecture and filament size sheathed by resistive CuNi alloys were measured and compared with the literature data. It was found that these fine-filamentary wires have high engineering current densities not reduced by twisting up to 10 mm, sufficient strain tolerances and therefore are promising for future applications where minimised AC losses are required due resistive sheaths, thin MgB2 filaments and short twist pitches.

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DC Characterization of Different Advanced MOSFET Architectures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.407 ◽

2011 ◽

Vol 324 ◽

pp. 407-410 ◽

Cited By ~ 1

Author(s):

Jalal Jomaah ◽

Majida Fadlallah ◽

Gerard Ghibaudo

Keyword(s):

Low Temperature ◽

Parameter Extraction ◽

Gate Length ◽

Double Gate ◽

Extraction Techniques ◽

Interaction Mechanisms ◽

Dc Characterization

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

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MODELING AND PERFORMANCE OF DOUBLE HETEROJUNCTION GaAlAs/GaAs INTEGRATED INJECTION LOGIC. FABRICATION AND DC CHARACTERIZATION OF THE BASIC CELL

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884150 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-713-C4-716

Author(s):

A. MARTY ◽

J. JAMAI ◽

J. P. VANNEL ◽

J. P. BAILBE

Keyword(s):

Basic Cell ◽

Double Heterojunction ◽

And Performance ◽

Dc Characterization

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Characterization of Low Temperature SiNx Films for 3D/2.5D-IC TSV

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.135.733 ◽

2015 ◽

Vol 135 (7) ◽

pp. 733-738 ◽

Cited By ~ 2

Author(s):

Yasushi Kobayashi ◽

Yoshihiro Nakata ◽

Tomoji Nakamura ◽

Mayumi B. Takeyama ◽

Masaru Sato ◽

...

Keyword(s):

Low Temperature

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Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0273 ◽

2019 ◽

Author(s):

Satish Kodali ◽

Chen Zhe ◽

Chong Khiam Oh

Keyword(s):

Yield Loss ◽

Performance Metrics ◽

Root Cause ◽

Advanced Technologies ◽

Capacitance Voltage ◽

Defect Localization ◽

Cv Measurements ◽

Lightly Doped Drain ◽

Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

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