DC Characterization of Different Advanced MOSFET Architectures

2011 ◽  
Vol 324 ◽  
pp. 407-410 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Low Temperature ◽  
Parameter Extraction ◽  
Gate Length ◽  
Double Gate ◽  
Extraction Techniques ◽  
Interaction Mechanisms ◽  
Dc Characterization

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

DC characterization of advanced fine-filamentary MgB2 superconducting wires.

2022 ◽  
Author(s):  
Pavol Kovac ◽  
Tibor Melisek ◽  
Ján Kováč ◽  
M. Búran ◽  
Imrich Husek ◽  
...  
Keyword(s):  
Low Temperature ◽  
Critical Currents ◽  
Ac Losses ◽  
Stress And Strain ◽  
Mgb2 Wires ◽  
Superconducting Wires ◽  
Current Densities ◽  
Dc Characterization

Abstract MgB2 wires with 114, 192 and 342 filaments of size 14-19 µm manufactured by HyperTech Research, Inc. have been subjected to low temperature DC measurements. R(T), I-V characteristics, critical currents and stress and strain tolerances of these wires differing by filament architecture and filament size sheathed by resistive CuNi alloys were measured and compared with the literature data. It was found that these fine-filamentary wires have high engineering current densities not reduced by twisting up to 10 mm, sufficient strain tolerances and therefore are promising for future applications where minimised AC losses are required due resistive sheaths, thin MgB2 filaments and short twist pitches.

scholarly journals Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si0.7Ge0.3 Tri-Gate pMOSFETs

2017 ◽  
Vol 834 ◽  
pp. 012001
Author(s):  
R. Laviéville ◽  
C. Le Royer ◽  
S. Barraud ◽  
G. Ghibaudo
Keyword(s):  
Low Temperature ◽  
Hole Mobility ◽  
Gate Length

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

2013 ◽  
Vol 28 (5) ◽  
pp. 055014 ◽  
Author(s):  
Ghader Darbandy ◽  
Thomas Gneiting ◽  
Heidrun Alius ◽  
Joaquín Alvarado ◽  
Antonio Cerdeira ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Double Gate ◽  
Extraction Techniques ◽  
Double Gate Mosfet

Comparative analysis of parameter extraction techniques for the electrical characterization of multi-junction CPV and m-Si technologies

Solar Energy ◽  
2018 ◽  
Vol 160 ◽  
pp. 275-288 ◽  
Author(s):  
Jesús Montes-Romero ◽  
Florencia Almonacid ◽  
Marios Theristis ◽  
Juan de la Casa ◽  
George E. Georghiou ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Electrical Characterization ◽  
Parameter Extraction ◽  
Extraction Techniques

Experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation NMOS devices

1987 ◽  
Author(s):  
G.A. Sai-Halasz ◽  
M.R. Wordeman ◽  
D.P. Kern ◽  
E. Ganin ◽  
S. Rishton ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Length ◽  
Experimental Technology

Characterization of Low Temperature SiNx Films for 3D/2.5D-IC TSV

2015 ◽  
Vol 135 (7) ◽  
pp. 733-738 ◽  
Author(s):  
Yasushi Kobayashi ◽  
Yoshihiro Nakata ◽  
Tomoji Nakamura ◽  
Mayumi B. Takeyama ◽  
Masaru Sato ◽  
...  
Keyword(s):  
Low Temperature
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