scholarly journals Ionic conductivity in oxide heterostructures: the role of interfaces

2010 ◽  
Vol 11 (5) ◽  
pp. 054503 ◽  
Author(s):  
Emiliana Fabbri ◽  
Daniele Pergolesi ◽  
Enrico Traversa
2015 ◽  
Vol 410 ◽  
pp. 74-81 ◽  
Author(s):  
Muriel Neyret ◽  
Marion Lenoir ◽  
Agnès Grandjean ◽  
Nicolas Massoni ◽  
Bruno Penelon ◽  
...  

2019 ◽  
Vol 21 (48) ◽  
pp. 26358-26367
Author(s):  
Hanghui Liu ◽  
Zhenhua Yang ◽  
Qun Wang ◽  
Xianyou Wang ◽  
Xingqiang Shi

A solid-state electrolyte (L7P3S10.25O0.75) with good ionic conductivity and electrochemical stability is successfully designed by oxygen doping.


2019 ◽  
Vol 21 (13) ◽  
pp. 6801-6809 ◽  
Author(s):  
Daniel Reuter ◽  
Catharina Binder ◽  
Peter Lunkenheimer ◽  
Alois Loidl

Dielectric spectroscopy reveals that the ionic conductivity of deep eutectic solvents is closely coupled to their reorientational dipolar relaxation dynamics.


Polymer ◽  
2001 ◽  
Vol 42 (1) ◽  
pp. 71-81 ◽  
Author(s):  
M Digar ◽  
Ten-Chin Wen
Keyword(s):  

2000 ◽  
Vol 153 (2) ◽  
pp. 287-293 ◽  
Author(s):  
Ashish Jain ◽  
Sandeep Saha ◽  
Prakash Gopalan ◽  
Ajit Kulkarni

2013 ◽  
Vol 117 (11) ◽  
pp. 5532-5543 ◽  
Author(s):  
Usman Ali Rana ◽  
R. Vijayaraghavan ◽  
Cara M. Doherty ◽  
Amreesh Chandra ◽  
Jim Efthimiadis ◽  
...  

2010 ◽  
Vol 48 (19) ◽  
pp. 2065-2071 ◽  
Author(s):  
Kazem Jeddi ◽  
Nader Taheri Qazvini ◽  
Seyed Hassan Jafari ◽  
Hossein Ali Khonakdar

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.


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