scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.


2001 ◽  
Vol 691 ◽  
Author(s):  
S. Bhattacharya ◽  
Y. Xia ◽  
V. Ponnambalam ◽  
S.J. Poon ◽  
N. Thadani ◽  
...  

ABSTRACTHalf-Heusler alloys are currently being investigated for their potential as thermoelectric materials [1], [2]. They exhibit high negative thermopower (40-250μV/K) and favorable electrical resistivity (0.1-8mW•cm) at room temperature. Attractive power factors (α2σT) of about (0.2-1.0W/m•K) at room temperature and about 4W/m•K at 600K [3] have been reported in these materials. But in order to achieve a high figure-of-merit in the half-Heusler alloys, the relatively high thermal conductivity in these materials (∼ 10 W/m•K) must be reduced. The thermal conductivity in these materials is composed of mainly a lattice contribution, compared to a very small electronic component. The challenge is to reduce the relatively high lattice thermal conductivity in these materials. Reported in this paper is a significant reduction of lattice thermal conductivity (∼1.5 - 3.5W/m•K) in some Ti-based half-Heusler alloys. Samples have been prepared by ball milling and followed by shock-compaction that has resulted into reduced grain sizes in these materials. The effects of the microstructure on the thermal transport properties of the Half-Heusler alloys have been investigated and are presented and discussed herein.


2011 ◽  
Vol 84-85 ◽  
pp. 671-675 ◽  
Author(s):  
Xiao Ling Qi ◽  
You Yu Fan ◽  
Ling Ke Zeng ◽  
Dong Sheng Zhu

Polycrystalline Ca3-xMgxCo4O9(x=0-0.3)ceramics were prepared by the sol–gel method combined with the ordinary pressing sintering and the thermoelectric properties were measured from room temperature to 673 K. The substitution of Mg2+for Ca2+had a greater impact on the thermoelectric properties of Ca3Co4O9. The electrical conductivity and the thermal conductivity reduced significantly with increasing Mg content, and the Seebeck coefficient increased simultaneously. The influence of Mg doping on the thermal conductivity is mainly embodied in the lattice thermal conductivity of Ca3Co4O9. The lattice thermal conductivity showed a significant change with the increase of the dopant content, while the carrier thermal conductivity had no obvious change with the doping increasing. These results indicated that the thermoelectric properties of the material could be optimized remarkably with the substitution of Mg. The figure of meritZreached 1.08×10-4K-1at 573 K for the sample of Ca2.8Mg0.2Co4O9.


1966 ◽  
Vol 44 (11) ◽  
pp. 2797-2808 ◽  
Author(s):  
W. B. Muir ◽  
P. T. Chiang ◽  
C. H. Champness

The Seebeck and Hall coefficients, the electrical and thermal conductivities, and the figure of merit, Z, have been measured as a function of dopant concentration of n-type CuBr-doped Bi1.75Sb0.25Te3. A maximum room-temperature value of Z = 2.65 × 10−3 °K−1 was obtained for a 0.08 wt % CuBr dopant concentration. The lattice thermal conductivity calculated by using exact statistics and assuming acoustic lattice scattering had a value of 0.011 W cm−1 °K−1. It was confirmed that each CuBr molecule donated a single electron to the conduction band and that about 2 × 1019 cm−3 residual acceptors were present in the alloys. The electron concentration and effective mass were independent of temperature between 100 and 300 °K and the effective mass was independent of carrier concentration between 5 and 60 × 1018 electrons cm−3. The conductivity mobility had a value of 480 cm2 volt−1 sec−1 at 300 °K which was independent of carrier concentration, and a T−3/2 temperature dependence between 100 °K and 300 °K.


2006 ◽  
Vol 46 ◽  
pp. 168-173
Author(s):  
Hitoshi Kohri ◽  
Ichiro Shiota ◽  
Masahiko Kato ◽  
Isao J. Ohsugi ◽  
Takashi Goto

Bi2Te3 is the best compound for thermoelectric materials around the room temperature. If the temperature range is shifted to higher side, it is useful to obtain electrical energy from waste heat source which is abundant at the temperature around 500 K. In this experiment, Bi2Te3-GeTe pseudo binary compounds were investigated to shift the temperature range. The lattice thermal conductivity was remarkably decreased at 50 or 75 mol%GeTe by synergy effect of solid solution and grain boundaries. The peak temperature of figure of merit Z for Bi2Te3-GeTe pseudo binary compounds was higher than Bi2Te3.


Author(s):  
Zhiyuan Xu ◽  
Cong Wang ◽  
Xuming Wu ◽  
Lei Hu ◽  
Yuqi Liu ◽  
...  

Ultralow lattice thermal conductivity is crucial to achieve a high thermoelectric figure of merit for thermoelectric applications. In this work, using the first-principles and phonon Boltzmann transport theory, we investigate...


2005 ◽  
Vol 886 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

ABSTRACTPolycrystalline-sintered samples of Tl2GeTe3, Tl4SnTe3, and Tl4PbTe3 were prepared by a solid-state reaction. Their thermoelectric properties were evaluated at temperatures ranging from room temperature to ca. 700 K by using the measured electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ). Despite their poor electrical properties, the dimensionless figure of merit ZT of all the compounds was relatively high, i.e., 0.74 at 673 K for Tl4SnTe3, 0.71 at 673 K for Tl4PbTe3, 0.29 at 473 K for Tl2GeTe3, due to the very low lattice thermal conductivity of the compounds.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).


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