Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

scholarly journals Electronic and Thermal Transport Properties of Complex Structured Cu-Bi-Se Thermoelectric Compound with Low Lattice Thermal Conductivity

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Hyeona Mun ◽  
Jung Young Cho ◽  
Sang Sun Yang ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Dimensionless Figure Of Merit ◽  
Impurity Doping ◽  
Electron Carriers ◽  
Mass Fluctuation

Monoclinic Cux+yBi5−ySe8structure has multiple disorders, such as randomly distributed substitutional and interstitial disorders by Cu as well as asymmetrical disorders by Se. Herein, we report the correlation of electronic and thermal properties with the structural complexities of Cux+yBi5−ySe8. It is found that the interstitial Cu site plays an important role not only to increase the electrical conductivity due to the generation of electron carriers but also to reduce the thermal conductivity mainly due to the phonon scattering by mass fluctuation. With impurity doping at the interstitial Cu site, an extremely low lattice thermal conductivity of 0.32 W·m−1·K−1was achieved at 560 K. These synergetic effects result in the enhanced dimensionless figure of merit (ZT).

Thermoelectric Generators of Sequentially Deposited Si/Si+Ge Nano-layered Superlattices

2009 ◽  
Vol 1181 ◽  
Author(s):  
Cydale Smith ◽  
Marcus Pugh ◽  
Hervie Martin ◽  
Rufus Durel Hill ◽  
Brittany James ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Absolute Temperature ◽  
Simulation Software ◽  
The Cross

AbstractEffective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2sσ/ KTC, σ is the electrical conductivity T/KTC, where S is the Seebeck coefficient, T is the absolute temperature and KTC is the thermal conductivity. In this study we have prepared the thermoelectric generator device of Si/Si+Ge multi-layer superlattice films using the ion beam assisted deposition (IBAD). To determine the stoichiometry of the elements of Si and Ge in the grown multilayer films and the thickness of the grown multi-layer films Rutherford Backscattering Spectrometry (RBS) and RUMP simulation software package were used. The 5 MeV Si ion bombardments were performed to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity.Keywords: Ion bombardment, thermoelectric properties, multi-nanolayers, Figure of merit.

Preparation and Thermoelectric Properties of Bi-Doped Mg2Si Nanocomposites

2009 ◽  
Vol 66 ◽  
pp. 17-20 ◽  
Author(s):  
Mei Jun Yang ◽  
Wei Jun Luo ◽  
Qiang Shen ◽  
Hong Yi Jiang ◽  
Lian Meng Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Heavy Doping ◽  
Nanocomposite Structures

Nanocomposites and heavy doping both are regarded as effective way to improve materials’ thermoelectric properties. 0.7at% Bi-doped Mg2Si nanocomposites were prepared by spark plasma sintering. Results of thermoelectric properties tests show that the doping of Bi atom effectively improves the electrical conductivity of Mg2Si，and the nanocomposite structures are helpful to reduce thermal conductivity and increase Seebeck coefficient, hence improving the thermoelectric performance. A maximum dimensionless figure of merit of 0.8 is obtained for the Bi-doped Mg2Si nanocomposite with 50 wt % nanopowder inclusions at 823K, about 63% higher than that of Bi-doped Mg2Si sample without nanopowder inclusions and 119% higher than that of microsized Mg2Si sample without Bi-doped, respectively.

Investigating the Effects of Sodium Chloride Particles on Thermoelectric Properties of Bismuth Telluride

2017 ◽  
Author(s):  
T. Alexander ◽  
M. Rahman ◽  
R. Asmatulu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Sodium Chloride ◽  
Seebeck Coefficient ◽  
Bismuth Telluride ◽  
Figure Of Merit ◽  
Hot Water ◽  
Dimensionless Figure Of Merit ◽  
Before And After ◽  
Baseline Sample

Cylindrical pellets of near stoichiometric bismuth telluride (Bi2Te3) powder with NaCl particles were made using a cold pressing and pressureless sintering technique. The sodium chloride was leached out from the samples in hot water, resulting in porous samples with varying levels of porosity. The electrical conductivity, Seebeck coefficient, and thermal conductivity were measured at room temperature using a testing apparatus designed and built by the researcher, both before and after the leaching of sodium chloride. From this data, the figure of merit was calculated. Samples of pure bismuth telluride (0% NaCl) served as the baseline samples for comparison. Both the presence of NaCl and pores were efficient at increasing the dimensionless figure of merit. Porous samples initially containing 20% NaCl had a 37.55% higher figure of merit compared to baseline samples, and an 89.07% increase in the figure of merit was seen from the solid samples with NaCl inclusions at a concentration of 30% by volume. The electrical conductivity was negatively affected by both inclusions and porosity, but significant increases in Seebeck coefficient, and reduced thermal conductivity were significantly enough for an overall increase in dimensionless figure of merit. The figure of merit for the baseline sample was approximately 0.18, and the highest values observed for the NaCl inclusion and porous samples were 0.34 and 0.25 respectively. These values are far less than that of what is considered a state of the art thermoelectric material, but the materials and methods used were simple, inexpensive, and scalable, showing great potential for applicability for use with optimized thermoelectric materials in hopes of further increasing their figure of merit.

MeV Si Ions Bombardment Effects on SiO2/SiO2-ZrNiSn Nano-layered Thermoelectric Generator

2008 ◽  
Vol 1102 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
D. ILA
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Generator ◽  
Rutherford Backscattering Spectrometry ◽  
Absolute Temperature ◽  
Dimensionless Figure Of Merit ◽  
Before And After

AbstractWe have deposited 50 nano-layers of 710 nm of SiO2/SiO2+ZrNiSn with a periodic structure consisting of alternating layers where each layer is about 14 nm thick. The purpose of this research is to generate nanolayers of nanostructures of ZrNiSn with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the energy deposited in the MeV ions track to nucleate nanostructures. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/ĸ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and ĸ is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing ĸ. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at seven different fluences ranging from 1014 to 1015 ions/cm2 in order to form nanostructures in layers of SiO2 containing few percent of ZrNiSn. Rutherford Backscattering Spectrometry (RBS) was used to monitor elemental analysis of the film.

Thermoelectric Properties of Tl-X-Te (X=Pb, Sn, Ge) Systems

2005 ◽  
Vol 886 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTPolycrystalline-sintered samples of Tl2GeTe3, Tl4SnTe3, and Tl4PbTe3 were prepared by a solid-state reaction. Their thermoelectric properties were evaluated at temperatures ranging from room temperature to ca. 700 K by using the measured electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ). Despite their poor electrical properties, the dimensionless figure of merit ZT of all the compounds was relatively high, i.e., 0.74 at 673 K for Tl4SnTe3, 0.71 at 673 K for Tl4PbTe3, 0.29 at 473 K for Tl2GeTe3, due to the very low lattice thermal conductivity of the compounds.

scholarly journals Thermoelectric Materials for Textile Applications

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3154
Author(s):  
Kony Chatterjee ◽  
Tushar K. Ghosh
Keyword(s):  
Thermal Conductivity ◽  
Carbon Nanotubes ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Inorganic Materials ◽  
Peltier Effect ◽  
Electronic Textiles ◽  
Heating And Cooling ◽  
Recent Attention

Since prehistoric times, textiles have served an important role–providing necessary protection and comfort. Recently, the rise of electronic textiles (e-textiles) as part of the larger efforts to develop smart textiles, has paved the way for enhancing textile functionalities including sensing, energy harvesting, and active heating and cooling. Recent attention has focused on the integration of thermoelectric (TE) functionalities into textiles—making fabrics capable of either converting body heating into electricity (Seebeck effect) or conversely using electricity to provide next-to-skin heating/cooling (Peltier effect). Various TE materials have been explored, classified broadly into (i) inorganic, (ii) organic, and (iii) hybrid organic-inorganic. TE figure-of-merit (ZT) is commonly used to correlate Seebeck coefficient, electrical and thermal conductivity. For textiles, it is important to think of appropriate materials not just in terms of ZT, but also whether they are flexible, conformable, and easily processable. Commercial TEs usually compromise rigid, sometimes toxic, inorganic materials such as bismuth and lead. For textiles, organic and hybrid TE materials are more appropriate. Carbon-based TE materials have been especially attractive since graphene and carbon nanotubes have excellent transport properties with easy modifications to create TE materials with high ZT and textile compatibility. This review focuses on flexible TE materials and their integration into textiles.

Thermoelectric Properties of K2Bi8−xSbxSe13Solid Solutions and Se Doping

2001 ◽  
Vol 691 ◽  
Author(s):  
Theodora Kyratsi ◽  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Duck-Young Chung ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Charge Transport ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Se Doping ◽  
Mass Fluctuation ◽  
Thermal Conductivities

ABSTRACTOur efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

High-temperature thermoelectric properties of n-type BayNixCo4−xSb12

2001 ◽  
Vol 16 (12) ◽  
pp. 3343-3346 ◽  
Author(s):  
X. F. Tang ◽  
L. M. Zhang ◽  
R. Z. Yuan ◽  
L. D. Chen ◽  
T. Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Electron Concentration ◽  
Lattice Thermal Conductivity ◽  
Filling Fraction ◽  
Ni Content ◽  
Increasing Temperature

Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type BayNixCo4−xSb12 (x = 0−0.1, y = 0−0.4) were investigated at temperature range of 300 to 900 K. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When y was fixed at 0.3, thermal conductivity decreased with increasing Ni content and reached a minimum value at about x = 0.05. Lattice thermal conductivity decreased with increasing Ni content, monotonously (y ≤ 0.1). Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature and decreased with increasing Ba filling fraction and Ni content. The maximum ZT value of 1.25 was obtained at about 900 K for n-type Ba0.3Ni0.05Co3.95Sb12.

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