Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

2010 ◽  
Vol 31 (3) ◽  
pp. 034004
Author(s):  
Wu Chenglong ◽  
Yang Jianhong ◽  
Cai Xueyuan ◽  
Shan Xiaofeng
2006 ◽  
Vol 937 ◽  
Author(s):  
Chang-Wook Han ◽  
Sang-Geun Park ◽  
Chang-Yeon Kim ◽  
Min-Koo Han ◽  
Gun-Woo Hyung ◽  
...  

ABSTRACTA top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.


2010 ◽  
Vol 57 (11) ◽  
pp. 3027-3032 ◽  
Author(s):  
Ivan Nausieda ◽  
Kevin Kyungbum Ryu ◽  
David Da He ◽  
Akintunde Ibitayo Akinwande ◽  
Vladimir Bulovic ◽  
...  

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