A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

2012 ◽  
Vol 33 (12) ◽  
pp. 125011
Author(s):  
Geliang Yang ◽  
Zhigong Wang ◽  
Zhiqun Li ◽  
Qin Li ◽  
Zhu Li ◽  
...  
2010 ◽  
Vol 7 (18) ◽  
pp. 1376-1381 ◽  
Author(s):  
Mohammad Sadegh Mehrjoo ◽  
Mohammad Yavari

Author(s):  
Jae-Sik Jang ◽  
Laurence Moquillon ◽  
Patrice Garcia ◽  
Estelle Lauga-Larroze ◽  
Jean-Michel Fournier

2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Ahmed Ragheb ◽  
Ghazal Fahmy ◽  
Iman Ashour ◽  
Abdel Hady Ammar

This paper presents a design of a reconfigurable low noise amplifier (LNA) for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) receivers. The proposed design is divided into three stages; the first one is a common gate (CG) topology to provide the input matching over a wideband. The second stage is a programmable circuit to control the mode of operation. The third stage is a current reuse topology to improve the gain, flatness and consume lower power. The proposed LNA is designed using 0.18 μm CMOS technology. This LNA has been designed to operate in two subbands of MB-OFDM UWB, UWB mode-1 and mode-3, as a single or concurrent mode. The simulation results exhibit the power gain up to 17.35, 18, and 11 dB for mode-1, mode-3, and concurrent mode, respectively. The NF is 3.5, 3.9, and 6.5 and the input return loss is better than −12, −13.57, and −11 dB over mode-1, mode-3, and concurrent mode, respectively. This design consumes 4 mW supplied from 1.2 V.


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