scholarly journals A new input matching technique for ultra wideband LNAs

2010 ◽  
Vol 7 (18) ◽  
pp. 1376-1381 ◽  
Author(s):  
Mohammad Sadegh Mehrjoo ◽  
Mohammad Yavari
Keyword(s):  
Ultra Wideband ◽  
Input Matching ◽  
Matching Technique

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

2012 ◽  
Vol 33 (12) ◽  
pp. 125011
Author(s):  
Geliang Yang ◽  
Zhigong Wang ◽  
Zhiqun Li ◽  
Qin Li ◽  
Zhu Li ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Ultra Wideband ◽  
High Linearity ◽  
Input Matching ◽  
Matching Technique ◽  
Cmos Lna

scholarly journals A Novel Reconfigurable MB-OFDM UWB LNA Using Programmable Current Reuse

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Ahmed Ragheb ◽  
Ghazal Fahmy ◽  
Iman Ashour ◽  
Abdel Hady Ammar
Keyword(s):  
Orthogonal Frequency Division Multiplexing ◽  
Cmos Technology ◽  
Low Noise ◽  
Ultra Wideband ◽  
Current Reuse ◽  
Input Matching ◽  
Common Gate ◽  
Programmable Circuit ◽  
Noise Amplifier ◽  
Mode 3

This paper presents a design of a reconfigurable low noise amplifier (LNA) for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) receivers. The proposed design is divided into three stages; the first one is a common gate (CG) topology to provide the input matching over a wideband. The second stage is a programmable circuit to control the mode of operation. The third stage is a current reuse topology to improve the gain, flatness and consume lower power. The proposed LNA is designed using 0.18 μm CMOS technology. This LNA has been designed to operate in two subbands of MB-OFDM UWB, UWB mode-1 and mode-3, as a single or concurrent mode. The simulation results exhibit the power gain up to 17.35, 18, and 11 dB for mode-1, mode-3, and concurrent mode, respectively. The NF is 3.5, 3.9, and 6.5 and the input return loss is better than −12, −13.57, and −11 dB over mode-1, mode-3, and concurrent mode, respectively. This design consumes 4 mW supplied from 1.2 V.

scholarly journals A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology

2018 ◽  
Vol 10 (5-6) ◽  
pp. 717-728
Author(s):  
Marco Dietz ◽  
Andreas Bauch ◽  
Klaus Aufinger ◽  
Robert Weigel ◽  
Amelie Hagelauer
Keyword(s):  
Noise Figure ◽  
Gain Control ◽  
Wide Frequency Range ◽  
Low Noise ◽  
Vector Network Analyzer ◽  
Ultra Wideband ◽  
Network Analyzer ◽  
Active Mixer ◽  
Input Matching ◽  
Better Than

AbstractA multi-octave receiver chain is presented for the use in a monolithic integrated vector network analyzer. The receiver exhibits a very wide frequency range of 1–32 GHz, where the gain meets the 3 dB-criterion. The differential receiver consists of an ultra-wideband low noise amplifier, an active mixer and an output buffer and exhibits a maximum conversion gain (CG) of 16.6 dB. The main design goal is a very flat CG over five octaves, which eases calibration of the monolithic integrated vector network analyzer. To realize variable gain functionality, without losing much input matching, an extended gain control circuit with additional feedback branch is shown. For the maximum gain level, a matching better than −10 dB is achieved between 1–28 GHz, and up to 30.5 GHz the matching is better than −8.4 dB. For both, the input matching and the gain of the LNA, the influence of the fabrication tolerances are investigated. A second gain control is implemented to improve isolation. The measured isolations between RF-to-LO and LO-to-RF are better than 30 dB and 60 dB, respectively. The LO-to-IF isolation is better than 35 dB. The noise figure of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output referred 1-dB-compression-point varies from 0.1 to 4.3 dBm from 2–32 GHz. The receiver draws a current of max. 66 mA at 3.3 V.

3–10 GHz ultra-wideband low-noise amplifier with new matching technique

2010 ◽  
Vol 46 (16) ◽  
pp. 1102 ◽  
Author(s):  
C.-P. Liang ◽  
C.-W. Huang ◽  
Y.-K. Lin ◽  
S.-J. Chung
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Matching Technique ◽  
Noise Amplifier

A 5.7 mW, UWB LNA for Wireless Applications Using Noise Canceling Technique in 90 nm CMOS

Frequenz ◽  
2020 ◽  
Vol 74 (1-2) ◽  
pp. 83-93
Author(s):  
Vikram Singh ◽  
Sandeep Kumar Arya ◽  
Manoj Kumar
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Low Noise ◽  
Ultra Wideband ◽  
Common Source ◽  
Cmos Process ◽  
Second Stage ◽  
Input Matching ◽  
Noise Amplifier ◽  
Noise Canceling

AbstractA 3–12 GHz ultra-wideband (UWB) low noise amplifier (LNA) is proposed in this paper. The first stage common-gate (CG), common-source (CS) noise canceling approach is used to achieve low noise-figure (NF). CG configuration at the input stage provides wideband input-matching. The noise of CG transistor is cancelled by systematically added two parallel CS transistors, whose outputs are cascoded in second stage. In order to achieve flat power gain (S21) response, a series peaking inductor is used in the second stage. The proposed LNA is designed in 90 nm CMOS process with chip-layout area of 0.467 mm2 and in comparison to the existing LNAs, it consumes a low power of 5.7 mW from a 1 V supply. The achieved input-reflection coefficient (S11) is <−7.5 dB, output-reflection coefficient (S22) is <−7.6 dB with NF < 5.8 dB for 3–12 GHz UWB and third-order intercept point (IIP3) of −19 dBm. It achieves high and flat S21 of 20.84 ± 0.28 dB over 4.2–10 GHz, with NF ranging from 2.6–3.6 dB.

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