Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Abstract Lateral current spreading in the 4H-SiC Schottky barrier diode (SBD) chip is investigated. The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated. The results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific chip. The linear specific spreading resistance at the on-state is calculated to be 8.6 Ω/cm in the fabricated chips. The proportion of the lateral spreading current in total forward current (P sp) is related to anode voltage and the chip area. P sp is increased with the increase in the anode voltage during initial on-state and then tends to a stable value. The stable values of P sp of the two fabricated chips are 32% and 54%. Combined with theoretical analysis, the proportion of the terminal region and scribing trench in a whole chip (K sp) is also calculated and compared with P sp. The K sp values of the two fabricated chips are calculated to be 31.94% and 57.75%. The values of K sp and P sp are close with each other in a specific chip. The calculated K sp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2, the value of P sp would be lower than 10%.

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Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3050739 ◽

2021 ◽

Vol 68 (3) ◽

pp. 1369-1373

Author(s):

Xuanwu Kang ◽

Yue Sun ◽

Yingkui Zheng ◽

Ke Wei ◽

Hao Wu ◽

...

Keyword(s):

Schottky Barrier ◽

Current Density ◽

Schottky Barrier Diode ◽

Low Leakage ◽

Forward Current

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The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

Journal of Nanomaterials ◽

10.1155/2013/636239 ◽

2013 ◽

Vol 2013 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Meisam Rahmani ◽

Razali Ismail ◽

Mohammad Taghi Ahmadi ◽

Mohammad Javad Kiani ◽

Mehdi Saeidmanesh ◽

...

Keyword(s):

Schottky Barrier ◽

Bilayer Graphene ◽

Graphene Nanoribbon ◽

Voltage Characteristic ◽

Schottky Barrier Diode ◽

Current Voltage Characteristic ◽

Turn On ◽

Forward Current ◽

Current Voltage ◽

Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

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Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18934 ◽

2021 ◽

Vol 21 (3) ◽

pp. 2001-2004

Author(s):

Seong-Ji Min ◽

Michael A. Schweitz ◽

Ngoc Thi Nguyen ◽

Sang-Mo Koo

Keyword(s):

Schottky Barrier ◽

Thermal Sensitivity ◽

Schottky Diodes ◽

Schottky Barrier Diode ◽

Pin Diode ◽

Schottky Barrier Diodes ◽

Saturation Current ◽

Pin Diodes ◽

Temperature Range ◽

Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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