Impact of Substrate Temperatures On the Properties of V2O5 Thin Films Deposited by Pulsed Laser Deposition

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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Pulsed Laser Deposition of High Quality ZnO Thin Films

MRS Proceedings ◽

10.1557/proc-285-489 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 6

Author(s):

S. Amirhaghi ◽

V. Craciun ◽

F. Beech ◽

M. Vickers ◽

S. Tarling ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Visible Region ◽

Pulsed Laser ◽

Laser Wavelength ◽

Laser Deposition ◽

Glass Substrates ◽

Krf Excimer Laser ◽

Substrate Temperatures ◽

532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

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Influence of Substrate Temperature in Plasma Assisted Pulsed Laser Deposition of Hydroxyapatite Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.1029 ◽

2006 ◽

Vol 514-516 ◽

pp. 1029-1033

Author(s):

Eugenio Luís Solla ◽

Jacinto P. Borrajo ◽

Pio González ◽

Julia Serra ◽

Stefano Chiussi ◽

...

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Rf Discharge ◽

Rf Plasma ◽

X Ray Diffraction ◽

Influence Of Substrate ◽

Substrate Temperatures

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.

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THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979202010452 ◽

2002 ◽

Vol 16 (06n07) ◽

pp. 825-829 ◽

Cited By ~ 3

Author(s):

TSUYOSHI YOSHITAKE ◽

TAKASHI NISHIYAMA ◽

TAKESHI HARA ◽

KUNIHITO NAGAYAMA

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Parameters ◽

Ambient Oxygen ◽

Diamond Thin Films ◽

Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

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Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

Applied Physics A ◽

10.1007/s00339-017-1310-x ◽

2017 ◽

Vol 123 (11) ◽

Cited By ~ 3

Author(s):

Mahendra Singh Rathore ◽

Arun Vinod ◽

Rambabu Angalakurthi ◽

A. P. Pathak ◽

Fouran Singh ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Pulsed Laser Deposition ◽

Ion Beam ◽

Pulsed Laser ◽

Laser Deposition ◽

Structural And Optical Properties ◽

Ion Beam Modification ◽

Substrate Temperatures

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Microstructure and Resistivity of Iridium Oxide Thin Films by Pulsed Laser Deposition Technique

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.2215 ◽

2007 ◽

Vol 336-338 ◽

pp. 2215-2217

Author(s):

Lian Meng Zhang ◽

Yan Sheng Gong ◽

Chuan Bin Wang ◽

Qiang Shen

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Ambient Atmosphere ◽

Room Temperature Resistivity ◽

Deposition Technique ◽

Preferential Growth ◽

Substrate Temperatures

Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.

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