Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

scholarly journals Study of LIPSS formation on bismuth thin films deposited by Pulsed Laser Deposition

2018 ◽  
Vol 31 (2) ◽  
pp. 39-43
Author(s):  
Adela Reyes-Contreras ◽  
Marco Antonio Camacho López ◽  
Lorena Romero-Salazar ◽  
Enrique Camps
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Periodic Structures ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Crystallographic Structure ◽  
Glass Substrates ◽  
Low Energies ◽  
Different Characteristics

In this work, we report the fabrication of bismuth thin films on glass substrates by Pulsed Laser Deposition. A focused beam of a Nd:YAG laser (9 ns, 10 Hz, 1064 and 532 nm) was utilized to carry out the ablation of a high purity Bi target. The per pulse laser fluence was varied between 0.95 and 1.35 J/cm2, depending on the laser wavelength used. The deposits were characterized by SEM and XRD to analyze the surface morphology of thin films and their crystalline structure, respectively. The SEM micrographs showed differences in roughness, which increased with the laser wavelength. The diffractograms revealed the formation of Bi thin films with a polycrystalline structure or with a preferential orientation, depending on the mean kinetic energy of the plasma ions. The as deposited bismuth thin films were irradiated with a non-focused laser beam at low energies below the ablation threshold. In the laser treated area, it could be observed the formation of periodic structures, known as LIPSS (laser induced periodic surface structures). Depending on the crystallographic structure of the irradiated film, the formed LIPSS showed different characteristics, such as width and shape.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

In Situ Pulsed Laser Deposition of Nd1.85Ce0.15Cu04−y

1990 ◽  
Vol 191 ◽  
Author(s):  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
M. S. Osofsky ◽  
K. S. Grabowski ◽  
T. A. Vanderah
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Slow Cooling ◽  
High Background ◽  
Composition And Structure ◽  
Vacuum Anneal ◽  
Krf Excimer Laser ◽  
Substrate Temperatures

ABSTRACTWe have deposited thin films of the electron-doped, high temperature superconductor Nd1.85Ce0.15CuO4−y by pulsed laser deposition. Films were deposited from a stoichiometric target using a KrF excimer laser (248 nm, 250 mJ/pulse, −2 J/cm2) as a function of substrate temperature, oxygen pressure and vacuum anneal conditions. The film composition and structure, as determined by RBS and XRD, were very sensitive to the deposition and subsequent anneal conditions. Stoichiometric films were deposited at low substrate temperatures (740 °C) but contained other orientations and phases. Predominantly c-axis oriented films were formed at high substrate temperatures (900 °C) and high background pressures of oxygen (200 mtorr). These films were semiconducting when quenched on oxygen or nitrogen following deposition. Slow cooling in a vacuum, yielded superconducting films with a maximum Tc-(onset) of 15 K and Tc(R=0) of 11 K. A variation of the deposition and anneal conditions indicated that loss of copper competed with the optimization of the carrier concentration.

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

1999 ◽  
Vol 8 (2-5) ◽  
pp. 463-467 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Hajime Aoki ◽  
Koji Suizu ◽  
Koji Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Carbon Thin Films

OPTICAL WAVEGUIDE FABRICATION AND REFRACTIVE INDEX CHARACTERIZATION OF Nd:LuVO4 THIN FILMS BY PULSED LASER DEPOSITION

2007 ◽  
Vol 14 (06) ◽  
pp. 1079-1082 ◽  
Author(s):  
HONGXIA LI ◽  
XIN WU ◽  
RENGUO SONG ◽  
JIYANG WANG
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Pulsed Laser Deposition ◽  
Silica Glass ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Propagation Mode ◽  
Glass Substrates ◽  
Oriented Polycrystalline ◽  
Waveguide Fabrication

High-quality Nd:LuVO 4 thin films have been grown on silica glass substrates by using a pulsed laser deposition technique. X-ray diffraction results show that the as-deposited Nd:LuVO 4 film is basically oriented polycrystalline, and strong (200) peak was revealed. The waveguide property was characterized by the prism-coupling method. The refractive index of the propagation mode is higher than that of the silica glass substrate which means that the dips correspond to real propagation mode, where the light could be well defined. The surface morphology of the deposited Nd:LuVO 4 films was also observed by using an atomic force microscopy.

THE APPLICATION OF PULSED LASER DEPOSITION IN PRODUCING BIOACTIVE CERAMIC FILMS

2005 ◽  
Vol 12 (03) ◽  
pp. 401-408 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
DIANGANG WANG
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Future Application ◽  
Ceramic Films ◽  
Bioactive Ceramic

Pulsed laser deposition (PLD) is a relatively new technique for producing thin films. It presents unique advantages for the deposition of bioactive ceramics. The mechanism and characteristics of the technique PLD are introduced. Its applications and current research status in hydroxyapatite and bioglass thin films are reviewed. The effect of processing parameters of PLD, including atmosphere, substrate temperature, laser wavelength and target properties, on the structures and the properties of the hydroxyapatite film, is analyzed in detail. Future application trends are also analyzed.

Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition

2005 ◽  
Vol 277 (1-4) ◽  
pp. 284-292 ◽  
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
W.J. Lee ◽  
G.H. Lee ◽  
I.S. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Glass Substrates
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