scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

2013 ◽  
Vol 547 ◽  
pp. 59-62 ◽  
Author(s):  
Jie Jiang ◽  
Liping Zhu ◽  
Yang Li ◽  
Yanmin Guo ◽  
Weishun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Gap Modulation

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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