scholarly journals III-V nanowires with quantum dots: MBE growth and properties

2021 ◽  
Vol 2015 (1) ◽  
pp. 012124
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Optoelectronic Devices ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Mbe Growth ◽  
Pl Spectrum ◽  
Good Optical Quality

Abstract We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

scholarly journals III-V nanostructures with different dimensionality on silicon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012121
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Optical Elements ◽  
High Optical Quality ◽  
Bandgap Semiconductors ◽  
Optic Systems ◽  
The Given

Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band

2020 ◽  
Vol 31 (6) ◽  
pp. 4605-4610 ◽  
Author(s):  
Mansour Aouassa ◽  
Giorgia Franzò ◽  
Elie Assaf ◽  
Larbi Sfaxi ◽  
Ridha M’Ghaieth ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Optical Quality ◽  
Silicon Substrates ◽  
High Optical Quality ◽  
Mbe Growth

The MBE Growth and Optical Quality of BaTiO3 and SrTiO3Thin Films on MgO

1994 ◽  
Vol 341 ◽  
Author(s):  
R. A. McKee ◽  
F. J. Walker ◽  
E. D. Specht ◽  
K. B. Alexander
Keyword(s):  
Optical Loss ◽  
Wavelength Dependence ◽  
Optical Quality ◽  
High Quality ◽  
High Optical Quality ◽  
Mbe Growth ◽  
Cell Height ◽  
Out Of Plane ◽  
Loss Coefficients

AbstractHigh quality epitaxial BaTiO3 and SrTiO3 have been grown on MgO, stabilized at a one unit cell height, and grown to film thicknesses of 0.5 - 0.7 μm. These relatively thick films remain adherent when thermally cycled between growth temperatures and room temperature, are crack free with high optical quality, and have both in-plane and out-of-plane X-ray rocking curves of 0.3–0.5°. These films have been grown using molecular beam epitaxy (MBE) methods starting with the TiO2 layer of the perovskite structure. The TiO2-Iayer/MgO interface uniquely satisfies electrostatic requirements for perovskite heteroepitaxy and provides the template structure that leads to the high quality films that are obtained. Wavelength dependence of optical loss has been characterized between 475 nm and 705 nm with loss coefficients < 1dB/cm being obtained at the He-Ne wavelength.

Optical Properties of Doped Cd1−xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Spectral Range ◽  
Room Temperature ◽  
Far Infrared ◽  
Optical Quality ◽  
Structural Quality ◽  
Reflectance Measurements ◽  
Low Temperature Photoluminescence

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

scholarly journals On the Relationship between Corneal Biomechanics, Macrostructure and Optical Properties

2021 ◽  
Author(s):  
Francisco J. Ávila ◽  
Laura Remón ◽  
Maria Concepción Marcellán
Keyword(s):  
Optical Properties ◽  
Biomechanical Properties ◽  
Optical Quality ◽  
Optical Transparency ◽  
Optical Aberrations ◽  
Corneal Aberrations ◽  
Scheimpflug Imaging ◽  
The Hierarchical Structure ◽  
The Relationship

Optical properties of the cornea are responsible for correct vision, ultrastructure allows optical transparency and biomechanical properties governs the shape, elasticity or stiffness of the cor-nea affecting ocular integrity and intraocular pressure. Therefore, optical aberrations, corneal transparency, structure and biomechanics play a fundamental role in the optical quality of hu-man vision, ocular health and refractive surgery outcomes. However, the convergence of those properties is not yet reported at macroscopic scale within the hierarchical structure of the cornea. This work explores the relationships between biomechanics, structure and optical properties (corneal aberrations and optical density) at macrostructural level of the cornea through dual Placido-Scheimpflug imaging and air-puff tonometry systems in a healthy young adult popula-tion. Results showed convergence between optical transparency, corneal macrostructure and biomechanics.

scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

Epitaxial growth and defect repair of heterostructured CuInSexS2−x/CdSeS/CdS quantum dots

Nanoscale ◽  
2019 ◽  
Vol 11 (41) ◽  
pp. 19529-19535
Author(s):  
Chao Wang ◽  
David Barba ◽  
Haiguang Zhao ◽  
Xin Tong ◽  
Zhiming Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Epitaxial Growth ◽  
Optoelectronic Devices ◽  
Building Blocks ◽  
Cds Quantum Dots ◽  
Defect Repair

Heterostructured quantum dots (hetero-QDs) have outstanding optical properties and chemical/photostability, which make them promising building blocks for use in various optoelectronic devices.

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

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