High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer

2007 ◽  
Author(s):  
Pei-Chin Chiu ◽  
Wei-Sheng Liu ◽  
Meng-Jie Shiau ◽  
Jen-Inn Chyi ◽  
Wen-Yen Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
High Optical Quality ◽  
Inas Quantum Dots

scholarly journals III-V nanostructures with different dimensionality on silicon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012121
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Optical Elements ◽  
High Optical Quality ◽  
Bandgap Semiconductors ◽  
Optic Systems ◽  
The Given

Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

scholarly journals New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

2007 ◽  
Vol 18 (35) ◽  
pp. 355302 ◽  
Author(s):  
Pablo Alonso-González ◽  
Luisa González ◽  
Yolanda González ◽  
David Fuster ◽  
Iván Fernández-Martínez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
High Optical Quality ◽  
Inas Quantum Dots ◽  
New Process

The MBE Growth and Optical Quality of BaTiO3 and SrTiO3Thin Films on MgO

1994 ◽  
Vol 341 ◽  
Author(s):  
R. A. McKee ◽  
F. J. Walker ◽  
E. D. Specht ◽  
K. B. Alexander
Keyword(s):  
Optical Loss ◽  
Wavelength Dependence ◽  
Optical Quality ◽  
High Quality ◽  
High Optical Quality ◽  
Mbe Growth ◽  
Cell Height ◽  
Out Of Plane ◽  
Loss Coefficients

AbstractHigh quality epitaxial BaTiO3 and SrTiO3 have been grown on MgO, stabilized at a one unit cell height, and grown to film thicknesses of 0.5 - 0.7 μm. These relatively thick films remain adherent when thermally cycled between growth temperatures and room temperature, are crack free with high optical quality, and have both in-plane and out-of-plane X-ray rocking curves of 0.3–0.5°. These films have been grown using molecular beam epitaxy (MBE) methods starting with the TiO2 layer of the perovskite structure. The TiO2-Iayer/MgO interface uniquely satisfies electrostatic requirements for perovskite heteroepitaxy and provides the template structure that leads to the high quality films that are obtained. Wavelength dependence of optical loss has been characterized between 475 nm and 705 nm with loss coefficients < 1dB/cm being obtained at the He-Ne wavelength.

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

2010 ◽  
Vol 96 (4) ◽  
pp. 043101 ◽  
Author(s):  
Damien Bordel ◽  
Denis Guimard ◽  
Mohan Rajesh ◽  
Masao Nishioka ◽  
Emmanuel Augendre ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Optical Quality ◽  
High Optical Quality

scholarly journals Printability of papers recycled from toner and inkjet-printed papers after deinking and recycling processes

2017 ◽  
Vol 16 (2) ◽  
pp. 76-82
Author(s):  
Arif Karademir ◽  
Cem Aydemir ◽  
Dogan Tutak ◽  
Raja Aravamuthan
Keyword(s):  
High Efficiency ◽  
Color Change ◽  
Paper Industry ◽  
Optical Quality ◽  
Recycled Paper ◽  
High Optical Quality ◽  
Contemporary World ◽  
Before And After ◽  
Better Than

Background: In our contemporary world, while part of the fibers used in the paper industry is obtained from primary fibers such as wood and agricultural plants, the rest is obtained from secondary fibers from waste papers. To manufacture paper with high optical quality from fibers of recycled waste papers, these papers require deinking and bleaching of fibers at desired levels. High efficiency in removal of ink from paper mass during recycling, and hence deinkability, are especially crucial for the optical and printability quality of the ultimate manufactured paper. Methods: In the present study, deinkability and printability performance of digitally printed paper with toner or inkjet ink were compared for the postrecycling product. To that end, opaque 80 g/m2 office paper was digitally printed under standard printing conditions with laser toner or inkjet ink; then these sheets of paper were deinked by a deinking process based on the INGEDE method 11 p. After the deinking operation, the optical properties of the obtained recycled handsheets were compared with unprinted (reference) paper. Then the recycled paper was printed on once again under the same conditions as before with inkjet and laser printers, to monitor and measure printing color change before and after recycling, and differences in color universe. Results: Recycling and printing performances of water-based inkjet and toner-based laser printed paper were obtained. The outcomes for laser-printed recycled paper were better than those for inkjet-printed recycled paper. Conclusions: Compared for luminosity Y, brightness, CIE a* and CIE b* values, paper recycled from laser-printed paper exhibited higher value than paper recycled from inkjet-printed paper.

Low-density InP quantum dots embedded in Ga0.51In0.49P with high optical quality realized by a strain inducing layer

2010 ◽  
Vol 97 (6) ◽  
pp. 063107 ◽  
Author(s):  
Daniel Richter ◽  
Robert Roßbach ◽  
Wolfgang-Michael Schulz ◽  
Elisabeth Koroknay ◽  
Christian Kessler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Low Density ◽  
High Optical Quality ◽  
Inp Quantum Dots

scholarly journals MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

2010 ◽  
Vol 245 ◽  
pp. 012009
Author(s):  
D Richter ◽  
R Hafenbrak ◽  
K D Jöns ◽  
W-M Schulz ◽  
M Eichfelder ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Seed Layer ◽  
Optical Quality ◽  
Low Density ◽  
High Optical Quality ◽  
Inp Quantum Dots

scholarly journals III-V nanowires with quantum dots: MBE growth and properties

2021 ◽  
Vol 2015 (1) ◽  
pp. 012124
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Optoelectronic Devices ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Mbe Growth ◽  
Pl Spectrum ◽  
Good Optical Quality

Abstract We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

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