scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Agam Prakash Vajpeyi ◽  
G. Tsiakatouras ◽  
A Adikimenakis ◽  
K. Tsagaraki ◽  
M Androulidaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Surface ◽  
Thermal Strain ◽  
Average Diameter ◽  
Optical Quality ◽  
Average Height ◽  
High Optical Quality ◽  
Mismatch Strain

ABSTRACTThe spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

scholarly journals III-V nanostructures with different dimensionality on silicon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012121
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Optical Elements ◽  
High Optical Quality ◽  
Bandgap Semiconductors ◽  
Optic Systems ◽  
The Given

Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

2008 ◽  
Vol 1 ◽  
pp. 091202 ◽  
Author(s):  
Yoshio Nishimoto ◽  
Ken Nakahara ◽  
Daiju Takamizu ◽  
Atsushi Sasaki ◽  
Kentaro Tamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

The MBE Growth and Optical Quality of BaTiO3 and SrTiO3Thin Films on MgO

1994 ◽  
Vol 341 ◽  
Author(s):  
R. A. McKee ◽  
F. J. Walker ◽  
E. D. Specht ◽  
K. B. Alexander
Keyword(s):  
Optical Loss ◽  
Wavelength Dependence ◽  
Optical Quality ◽  
High Quality ◽  
High Optical Quality ◽  
Mbe Growth ◽  
Cell Height ◽  
Out Of Plane ◽  
Loss Coefficients

AbstractHigh quality epitaxial BaTiO3 and SrTiO3 have been grown on MgO, stabilized at a one unit cell height, and grown to film thicknesses of 0.5 - 0.7 μm. These relatively thick films remain adherent when thermally cycled between growth temperatures and room temperature, are crack free with high optical quality, and have both in-plane and out-of-plane X-ray rocking curves of 0.3–0.5°. These films have been grown using molecular beam epitaxy (MBE) methods starting with the TiO2 layer of the perovskite structure. The TiO2-Iayer/MgO interface uniquely satisfies electrostatic requirements for perovskite heteroepitaxy and provides the template structure that leads to the high quality films that are obtained. Wavelength dependence of optical loss has been characterized between 475 nm and 705 nm with loss coefficients < 1dB/cm being obtained at the He-Ne wavelength.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

scholarly journals Printability of papers recycled from toner and inkjet-printed papers after deinking and recycling processes

2017 ◽  
Vol 16 (2) ◽  
pp. 76-82
Author(s):  
Arif Karademir ◽  
Cem Aydemir ◽  
Dogan Tutak ◽  
Raja Aravamuthan
Keyword(s):  
High Efficiency ◽  
Color Change ◽  
Paper Industry ◽  
Optical Quality ◽  
Recycled Paper ◽  
High Optical Quality ◽  
Contemporary World ◽  
Before And After ◽  
Better Than

Background: In our contemporary world, while part of the fibers used in the paper industry is obtained from primary fibers such as wood and agricultural plants, the rest is obtained from secondary fibers from waste papers. To manufacture paper with high optical quality from fibers of recycled waste papers, these papers require deinking and bleaching of fibers at desired levels. High efficiency in removal of ink from paper mass during recycling, and hence deinkability, are especially crucial for the optical and printability quality of the ultimate manufactured paper. Methods: In the present study, deinkability and printability performance of digitally printed paper with toner or inkjet ink were compared for the postrecycling product. To that end, opaque 80 g/m2 office paper was digitally printed under standard printing conditions with laser toner or inkjet ink; then these sheets of paper were deinked by a deinking process based on the INGEDE method 11 p. After the deinking operation, the optical properties of the obtained recycled handsheets were compared with unprinted (reference) paper. Then the recycled paper was printed on once again under the same conditions as before with inkjet and laser printers, to monitor and measure printing color change before and after recycling, and differences in color universe. Results: Recycling and printing performances of water-based inkjet and toner-based laser printed paper were obtained. The outcomes for laser-printed recycled paper were better than those for inkjet-printed recycled paper. Conclusions: Compared for luminosity Y, brightness, CIE a* and CIE b* values, paper recycled from laser-printed paper exhibited higher value than paper recycled from inkjet-printed paper.

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