scholarly journals INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS

2010 ◽  
Vol 2 (1) ◽  
pp. 59-62
Author(s):  
Vytautas Bleizgys ◽  
Andrius Platakis
Keyword(s):  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Dynamic Parameters ◽  
Insulated Gate Bipolar Transistors ◽  
Collector Current ◽  
Fall Time ◽  
Insulated Gate Bipolar Transistor ◽  
Driver Circuit ◽  
The Impact

The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.

Device Simulation and Design Optimization for Diamond Based Insulated-gate Bipolar Transistors

2006 ◽  
Vol 956 ◽  
Author(s):  
Haitao Ye ◽  
Niall Tumilty ◽  
David Garner ◽  
Richard B. Jackman
Keyword(s):  
Carrier Concentration ◽  
Potential Distribution ◽  
Device Simulation ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Two Dimensional ◽  
Insulated Gate Bipolar Transistors ◽  
Base Region ◽  
Insulated Gate Bipolar Transistor

ABSTRACTA diamond based insulated gate bipolar transistor is incorporated into a two-dimensional device simulator (MEDICI) to examine the current gain (β) and potential distribution across the device. Initially, work has focused on an important component of IGBT structure, the PNP bipolar transistor, which has been simulated and is reported upon in this paper. Empirical parameters for emitter and collector regions were used. Various carrier concentrations for base region were used to optimize the simulation. It was found that decreasing the thickness of base region leads to an increase in current gain. A buffer layer is needed to prevent the punch-through at low carrier concentration in the base region. Various approaches of increasing the current gain are also discussed in this paper.

Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon

1985 ◽  
Vol 53 ◽  
Author(s):  
J.C. Sturm ◽  
J.F. Gibbons
Keyword(s):  
Minority Carrier ◽  
Strong Dependence ◽  
Three Dimensional ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Collector Current ◽  
Beam Laser ◽  
P Type ◽  
Mos Device

ABSTRACTThe minority carrier properties of shaped—beam laser-recrystallized polysilicon films have been studied, leading to the successful fabrication of vertical bipolar transistors in these films and to the demonstration of a novel three—dimensional mergedvertical bipolar—MOS device. Experiments with lateral transistors established a minority carrier diffusion length of 4 μm in p—type recrystallized films. Vertical bipolar npn transistors with a base—width of 0.2 μm were fabricated in 0.75–μm—thick films using a polysilicon emitter technology. The strong dependence of the gain of the transistors on hydrogen annealing steps is described. With an Ar:H plasma anneal to decrease base—emitter space—charge region recombination, a common—emitter current gain of 100 was possible. The bipolar transistor technology was then used to develop a 3—D fourterminal merged verticalbipolar—MOS device in a recrystallized film. It consists of the three terminals of a bipolar transistor plus a fourth underlying terminal which serves to switch the collector current on or off. A simple model for the device is presented.

HVDC Switching Using Microprocessor for Polarization and Depolarization Measurement

2013 ◽  
Vol 284-287 ◽  
pp. 1131-1135
Author(s):  
Roos Muhammad Khair ◽  
Kasri Nur Faizal ◽  
Nor Asiah Muhamad
Keyword(s):  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Depolarization Current ◽  
Reliable Technique ◽  
Voltage Balancing ◽  
High Voltage Direct Current ◽  
Insulated Gate Bipolar Transistor ◽  
Current Switch ◽  
Non Destructive ◽  
Transistor Circuit

Polarization and Depolarization Current (PDC) testing is a non-destructive dielectric testing method to determine the conductivity and moisture content of the insulator. This paper presents the application of microprocessor in HVDC (High Voltage Direct Current) switch to switch “ON” and “OFF” the PDC measurement circuit. This paper also reviewed the involvement and also the function of microprocessor to control the switching circuit and also the function of auxiliary circuit in controlling the voltage balancing of each device in the IGBT (Insulated Gate Bipolar Transistor) circuit. A simple and reliable technique of voltage-balancing circuit for the series operation of devices is presented to overcome the unbalance load and it is well controlled by the microprocessor circuit. The operation principle and analysis are presented and tested on 2 series-connected of 600-V/5-A insulated gate bipolar transistors to handle 1-kV/400-A switching for 10,000 seconds.

An Investigation of Material Limit Characteristics of SiC IGBTs

2012 ◽  
Vol 717-720 ◽  
pp. 1143-1146 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Hajime Okumura
Keyword(s):  
Carrier Lifetime ◽  
Bipolar Transistors ◽  
High Conductivity ◽  
Device Performance ◽  
Insulated Gate Bipolar Transistors ◽  
Pin Diodes ◽  
The Impact ◽  
Original Type

The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT (HiGT), and Si-limit IGBT on the performance of SiC IGBTs is examined. We first show that the forward characteristics of the original type of planer SiC IGBTs are much worse than those of SiC PiN diodes, even if the carrier lifetime is improved. Next, we show that the forward characteristics of SiC IEGTs and SiC HiGTs are comparable to those of SiC PiN diodes. Thus, device concepts of Si IGBTs are effective in improving the device performance of SiC IGBTs. Finally, it is shown that a SiC-limit IGBT can be realized when the mesa width is less than 0.5 μm.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

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