INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS
Keyword(s):
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.
2013 ◽
Vol 284-287
◽
pp. 1131-1135
2012 ◽
Vol 717-720
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pp. 1143-1146
◽
2021 ◽
Vol 2030
(1)
◽
pp. 012026