scholarly journals MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire

2021 ◽  
Vol 2086 (1) ◽  
pp. 012039
Author(s):  
A N Terpitskiy ◽  
I V Ilkiv ◽  
K P Kotlyar ◽  
D A Kirilenko ◽  
G E Cirlin
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Core Shell ◽  
Hexagonal Crystal Structure ◽  
Hexagonal Crystal ◽  
Mbe Growth ◽  
Quantum Well Structure ◽  
Raman Characterization

Abstract Heterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1 peak corresponded to hexagonal phases of germanium.

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

Correlation Between the Quantized Energies and the Photovoltaic Spectra for a GaAs/A1GaAs Quantum Well Structure

1996 ◽  
Vol 426 ◽  
Author(s):  
O. L. Russo ◽  
V. Rehn ◽  
T. W. Nee ◽  
K. A. Dumas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Energy Range ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structure ◽  
Adjacent Line

AbstractWe have measured the photovoltaic spectra at 300K for a PIN GaAs/AlGaAs structure containing five coupled wells (50A/28A) grown by molecular beam epitaxy (MBE). The spectra were obtained in the energy range from 1.40 eV to 1.60 eV. This is the region in which optical transitions between the sub-band valence and conduction states are possible. Five direct optical transitions are allowed for this structure. These transitions are normally difficult to measure at room temperature because of broadening, nevertheless, some of the allowed transitions were observed from the photovoltaic spectra and agreed with calculations. We have previously shown that measurements made using electroreflectance (ER) agree with these results. However, with ER, three possible transitions were observed but only one with certainty, possibly because of interference caused by adjacent line spectra interaction. This interference appears to be less pronounced in the photovoltaic spectra, which aids in the identification of transitions.

Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy

2011 ◽  
Vol 32 (4) ◽  
pp. 043004 ◽  
Author(s):  
Jifang He ◽  
Xiangjun Shang ◽  
Mifeng Li ◽  
Yan Zhu ◽  
Xiuying Chang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structure
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