scholarly journals Fabrication and complex investigation of LAFE based on CNT by PECVD with island catalyst

2021 ◽  
Vol 2103 (1) ◽  
pp. 012110
Author(s):  
M A Chumak ◽  
A A Rokacheva ◽  
L A Filatov ◽  
A G Kolosko ◽  
S V Filippov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Large Area ◽  
Complex Investigation ◽  
Sio2 Substrate ◽  
Emission Profile ◽  
Fe Catalyst ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Using Data

Abstract This paper presents a study of large area field emitter based on carbon nanotubes grown by PECVD method on Si/SiO2 substrate with Fe catalyst. The catalyst was deposited by CVD on the substrate from ferrocene in the form of islands. The sample creation technology was described and results of the emission properties study were presented. Current-voltage characteristics were registered and tested for compliance with the cold field emission regime. The fluctuation statistic of effective microscopic parameters was constructed. Using data from a computerized field projector, the emission profile of the sample was calculated.

scholarly journals Проверка применимости закона полевой эмиссии к исследованию многоострийных полевых эмиттеров методом анализа степени предэкспоненциального множителя напряжения

2019 ◽  
Vol 45 (18) ◽  
pp. 13
Author(s):  
Е.О. Попов ◽  
А.Г. Колосько ◽  
С.В. Филиппов
Keyword(s):  
Experimental Data ◽  
Carbon Nanotubes ◽  
Statistical Analysis ◽  
Field Emission ◽  
Power Law ◽  
Constant Voltage ◽  
Current Voltage ◽  
Power Law Exponent ◽  
Emission Mode ◽  
Current Voltage Characteristics

A method for testing the compliance of experimental current-voltage characteristics with a cold field emission mode is described. The method is based on the variation of voltage power-law exponent in the semilogarithmic coordinates ln (I/U^k) vs1/U, as well as the statistical analysis of experimental data fluctuations. It is shown that the current-voltage characteristics obtained using the high-voltage fast-scanning technique have a better fit to the field emission law than the characteristics given by a slow scanning with a constant voltage. A multi-tip nanocomposite emitter based on carbon nanotubes was taken as a sample. For processing experimental data, it was proposed to use modified Fowler-Nordheim coordinates with a voltage power-law exponent of 1.24.

scholarly journals Methods for measuring the local emission characteristics of CNT based multi-tip emitters

2021 ◽  
Vol 2103 (1) ◽  
pp. 012116
Author(s):  
E O Popov ◽  
A G Kolosko ◽  
S V Filippov ◽  
S A Ponyaev
Keyword(s):  
Enhancement Factor ◽  
Field Enhancement ◽  
Emission Characteristics ◽  
Large Area ◽  
Software Complex ◽  
Emission Area ◽  
Current Voltage ◽  
Local Emission ◽  
Current Voltage Characteristics ◽  
Comparison Of The Results

Abstract The work is aimed at obtaining microscopic emission characteristics of individual emission sites of a multi-tip field cathode or large-area emitter (LAFE) based on processing the current-voltage characteristics and emission glow patterns. Processing was carried out on a hardware-software complex for the study of field emission characteristics in real time. The calculation of the microscopic characteristics of the local emission sites — the field enhancement factor and emission area — was carried out by several different algorithms. A comparison of the results showed that the algorithms gave close values of the characteristics, which increases the reliability of the estimates made.

Field Emission Energy Distribution and Current-Voltage Characteristics Using Single Tip Gated Diodes

1999 ◽  
Vol 558 ◽  
Author(s):  
John M Bernhard ◽  
Ambrosio A. Rouse ◽  
Edward D. Sosa ◽  
Bruce E. Gnade ◽  
David E. Golden ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Data Acquisition ◽  
Work Function ◽  
Field Emission ◽  
Low Cost ◽  
Energy Analyzer ◽  
Flat Surfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Camac Crate

ABSTRACTField emission current-voltage characteristics and simultaneous field emission electron energy distributions have been measured using single tip gate diodes. An energy distribution is generated at each step of a current-voltage characteristic using a compact low-cost simulated hemispherical energy analyzer. A PC programmed with graphics-based data acquisition software is used for data acquisition and control. The PC is connected to a CAMAC crate and a picoammeter through a GPIB interface. The picoammeter measures the current leaving the tip and the field emission electrons are energy analyzed, detected and processed in the CAMAC crate. The CAMAC crate also sends control voltages. to the gate anode and the energy analyzer. This apparatus was used to measure tip work functions and Fowler-Nordheim tip shape parameters for Mo and IrO2 field emission tips. Work function measurements from field emission tips are compared to photoelectric work function measurements from flat surfaces.

LOW TEMPERATURE GROWTH OF ALIGNED CARBON NANOTUBES IN LARGE AREA

2002 ◽  
Vol 16 (06n07) ◽  
pp. 853-859 ◽  
Author(s):  
P. H. LIN ◽  
C. R. LIN ◽  
K. H. CHEN ◽  
L. C. CHEN
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Microwave Plasma ◽  
Iron Catalyst ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
Emission Measurement ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Fe Catalyst

We have synthesized well-aligned, uniform carbon nanotubes (CNTs) in large area at low temperature of 500°C using microwave plasma- enhanced chemical vapor deposition on silicon and Corning glass 7059. This is a two-step process in that ion beam sputtering deposition was used to deposit iron catalyst thin films and followed by hydrogen plasma pretreatment to form nano-size Fe particles before the CNTs growth at the second step. The thickness of Fe catalyst thin film was found to be the most important factor in the low temperature CNTs growth process. Systematic control of the length, diameter, and alignment of the CNTs has been achieved by changing the deposition parameters such us microwave power, pressure, temperature and the thickness of Fe catalyst. High resolution SEM and TEM were used to characterize the morphology and structure of the nanotubes. Field emission measurement showed a low turn on field (6.2 V/m) and high emission current density (0.1 mA/cm2 at 9 V/m) for the films grown at low temperature of 500°C.

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 1010-1013 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Maria A. Kuznetsova ◽  
...  
Keyword(s):  
Field Emission ◽  
Wide Bandgap ◽  
Voltage Characteristic ◽  
Vacuum Field ◽  
Current Voltage ◽  
Capacitor Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Manufacturing Methods ◽  
Diode Current

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

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