The Research on the Complexity of 1T-TaS2 at Ultra-low Temperatures
Abstract Graphene, as a successfully industrialized two-dimensional material, has greatly promoted the development of other two-dimensional materials, such as transition metal dichalcogenide (TMDs). 1T-TaS2 is a classical TMDs material, which presents metallicity at high temperature. It undergoes a variety of charge density wave (CDW) phase transitions during the temperature declining process, and presents insulating properties at low temperature. During the temperature rise period, 1T-TaS2 goes through a phase transition, from an energy band insulator to Mott insulator, followed by an insulation-metal phase transition. The complexity of 1T-TaS2 phase diagram encourages researchers to conduct extensive research on it. This paper, via means of resistance, magnetic susceptibility and other technical methods, finds out that the ultra-low temperature of 1T-TaS2 suggests additional complexity. In addition, with the angle resolved photoemission spectroscopy (ARPES) technique of in-situ alkali metal evaporation, this paper proposes that the 1T-TaS2 ultra-low temperature ground state may exist a combination of state and surface state. Our findings provide more experimental evidence for the physical mechanism of this system.