The Research on the Complexity of 1T-TaS2 at Ultra-low Temperatures

Graphene, as a successfully industrialized two-dimensional material, has greatly promoted the development of other two-dimensional materials, such as transition metal dichalcogenide (TMDs). 1T-TaS2 is a classical TMDs material, which presents metallicity at high temperature. It undergoes a variety of charge density wave (CDW) phase transitions during the temperature declining process, and presents insulating properties at low temperature. During the temperature rise period, 1T-TaS2 goes through a phase transition, from an energy band insulator to Mott insulator, followed by an insulation-metal phase transition. The complexity of 1T-TaS2 phase diagram encourages researchers to conduct extensive research on it. This paper, via means of resistance, magnetic susceptibility and other technical methods, finds out that the ultra-low temperature of 1T-TaS2 suggests additional complexity. In addition, with the angle resolved photoemission spectroscopy (ARPES) technique of in-situ alkali metal evaporation, this paper proposes that the 1T-TaS2 ultra-low temperature ground state may exist a combination of state and surface state. Our findings provide more experimental evidence for the physical mechanism of this system.

Moiré Nanolithography Based on Ultrathin Anodized Aluminium Oxide Membranes

A new nanofabrication method for construction of complex superlattice structure with versatile super-periodicity is developed using the moiré fringe of anodized aluminium oxide (AAO) membranes. Two ultrathin AAO membranes with long-range order holes are stacked to form 2D moiré nanopatterns. Both rotational symmetry and the periodicity of the holes are modified by the relative spatial displacement between the superimposing layers. Using the membranes as metal evaporation masks, a wide assortment of complex Al nanostructures are fabricated by varying the misorientation angle of the two ultrathin AAO membranes. Highly ordered Al nanoparticles with different sizes, shapes, orientations, and arrangements on substrates are achieved, which are expected to give abundant surface plasmon mode.

A Flexible a-SiC-Based Neural Interface Utilizing Pyrolyzed-Photoresist Film (C) Active Sites

Carbon containing materials, such as graphene, carbon-nanotubes (CNT), and graphene oxide, have gained prominence as possible electrodes in implantable neural interfaces due to their excellent conductive properties. While carbon is a promising electrochemical interface, many fabrication processes are difficult to perform, leading to issues with large scale device production and overall repeatability. Here we demonstrate that carbon electrodes and traces constructed from pyrolyzed-photoresist-film (PPF) when combined with amorphous silicon carbide (a-SiC) insulation could be fabricated with repeatable processes which use tools easily available in most semiconductor facilities. Directly forming PPF on a-SiC simplified the fabrication process which eliminates noble metal evaporation/sputtering and lift-off processes on small features. PPF electrodes in oxygenated phosphate buffered solution at pH 7.4 demonstrated excellent electrochemical charge storage capacity (CSC) of 14.16 C/cm2, an impedance of 24.8 ± 0.4 kΩ, and phase angle of −35.9 ± 0.6° at 1 kHz with a 1.9 kµm2 recording site area.

Simulating the fabrication of aluminium oxide tunnel junctions

Aluminium oxide (AlOx) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility and reliability of qubits have been made possible through new circuit designs, there are still knowledge gaps in the relevant materials science. A better understanding of how fabrication conditions affect the density, uniformity, and elemental composition of the oxide barrier may lead to the development of lower noise and more reliable nanoelectronics and quantum computers. In this paper, we use molecular dynamics to develop models of Al–AlOx–Al junctions by iteratively growing the structures with sequential calculations. With this approach, we can see how the surface oxide grows and changes during the oxidation simulation. Dynamic processes such as the evolution of a charge gradient across the oxide, the formation of holes in the oxide layer, and changes between amorphous and semi-crystalline phases are observed. Our results are widely in agreement with previous work including reported oxide densities, self-limiting of the oxidation, and increased crystallinity as the simulation temperature is raised. The encapsulation of the oxide with metal evaporation is also studied atom by atom. Low density regions at the metal–oxide interfaces are a common feature in the final junction structures which persists for different oxidation parameters, empirical potentials, and crystal orientations of the aluminium substrate.

Numerical Study on the Evolution Mechanism of the Crater under a Millisecond Laser

A two-dimensional numerical model considering recoil pressure and Hertz-Knudsen ablation rate was established on the foundation of the laser remelting model to investigate the influence of laser processing parameters on crater feature and melted zone, and it was verified through experiments. The temperature and flow velocity distribution of the molten pool during the formation of the crater were analyzed. The results showed that the ablation velocity could be considered under a higher laser peak power density or higher pulse width due to the metal evaporation caused by heat accumulation. The depth and diameter of the crater were significantly affected by laser peak power density and laser pulse duration. Simultaneously, the height of the edge bulge decreased with the increase in pulse duration after 1.5 ms, and the growth rate of central depth was more rapid than that of edge bulge height with the increase of laser peak power density. In the texture with the same depth, a larger melted zone could be obtained with a longer laser duration than the higher peak power density.

Optimization of Ohmic Contacts to p-GaAs Nanowires

The performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for planar heterostructures cannot be directly applied. Here, we report on the fabrication and optimization of Pt/Ti/Pt/Au Ohmic contacts for p-type GaAs nanowires grown by molecular beam epitaxy. The devices were characterized by current–voltage (IV) measurements. The linearity of the IV characteristics curves of individual nanowires was optimized by adjusting the layout of the contact metal layers, the surface treatment prior to metal evaporation, and post-processing thermal annealing. Our results reveal that the contact resistance is remarkably decreased when a Pt layer is deposited on the GaAs nanowire prior to the traditional Ti/Pt/Au multilayer layout used for p-type planar GaAs. These findings are explained by an improved quality of the metal-GaAs interface, which was evidenced by grazing incidence X-ray diffraction measurements in similar metallic thin films deposited on GaAs (110) substrates. In particular, we show that Ti exhibits low degree of crystallinity when deposited on GaAs (110) surface which directly affects the contact resistance of the NW devices. The deposition of a thin Pt layer on the NWs prior to Ti/Pt/Au results in a 95% decrease in the total electrical resistance of Be-doped GaAs NWs which is associated to the higher degree of crystallinity of Pt than Ti when deposited directly on GaAs (110).