Analysis on Influence of Hydrogen Content Exceeding Standard in GaAs Device
2022 ◽
Vol 2160
(1)
◽
pp. 012006
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Abstract Aiming at the problem of hydrogen content exceeding the standard in GaAs device, the influence mechanism of hydrogen content exceeding the standard on the device is analyzed, the failure model of hydrogen content exceeding the standard in GaAs device in engineering is given, the source of hydrogen is analyzed, and the protective measures of hydrogen content exceeding the standard are given. It is of certain guiding significance for future engineering application.
2012 ◽
Vol 166-169
◽
pp. 215-218
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2013 ◽
Vol 336-338
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pp. 995-998
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2014 ◽
Vol 513-517
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pp. 2687-2693
2012 ◽
Vol 594-597
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pp. 472-481
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2013 ◽
Vol 313-314
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pp. 281-286
2008 ◽
Vol 33-37
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pp. 115-120
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2003 ◽
Vol 2
(1)
◽
pp. 32
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2008 ◽
Vol 7
◽
pp. 102-102
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