scholarly journals Quantum Hall Ferromagnetic-Paramagnetic Transition in p-Si/SiGe/Si Quantum Wells in a Tilted Magnetic Field

2012 ◽  
Vol 400 (4) ◽  
pp. 042005 ◽  
Author(s):  
I L Drichko ◽  
I Yu Smirnov ◽  
A V Suslov ◽  
O A Mironov ◽  
D R Leadley
2009 ◽  
Vol 23 (12n13) ◽  
pp. 2808-2812
Author(s):  
D. R. LUHMAN ◽  
W. PAN ◽  
T. M. LU ◽  
D. C. TSUI ◽  
L. N. PFEIFFER ◽  
...  

We report the results of tilted magnetic field experiments on three high quality wide GaAs quantum wells, with particular emphasis on the N ≥ 1 Landau levels. With an increasing component of in-plane magnetic field, B∥, we observe reentrant behavior for the odd filling factor quantum Hall states. This reentrance is not explained within a single-particle energy level crossing scheme and may be related to the collapse of interlayer tunneling.


2004 ◽  
Vol 18 (27n29) ◽  
pp. 3597-3602 ◽  
Author(s):  
B. A. PIOT ◽  
D. K. MAUDE ◽  
Z. R. WASILEWSKI ◽  
K. J. FRIEDLAND ◽  
R. HEY ◽  
...  

The collapse of spin splitting in the integer quantum Hall effect is investigated for a series of Al x Ga 1-x As / GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature, and a simple model is developed to simulate spin splitting. As expected a single-electron picture cannot reproduce the observed spin splitting, whereas a phenomenological enhanced-spin gap taking into account exchange interactions between electrons provides a good description. The phenomenological spin gap, which is linear in B at high magnetic field, collapses when the spin splitting collapses. This is consistent with previously proposed disorder-driven destruction of exchange interactions with decreasing magnetic field.


2019 ◽  
Vol 32 (3) ◽  
pp. 035303
Author(s):  
I L Drichko ◽  
I Yu Smirnov ◽  
A V Suslov ◽  
M O Nestoklon ◽  
D Kamburov ◽  
...  

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