scholarly journals Influence of light on electrophysical properties of thin films of mixed zinc and tin oxides

2021 ◽  
Vol 1035 (1) ◽  
pp. 012033
Author(s):  
V V Petrov ◽  
E M Bayan ◽  
Yu N Varzarev ◽  
M G Volkova ◽  
V Yu Storozhenko ◽  
...  
1972 ◽  
pp. 449-454
Author(s):  
F. Ciorăscu ◽  
I. Spînulescu-Carnaru ◽  
C. Stănescu

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.


2006 ◽  
Vol 915 ◽  
Author(s):  
Halyna Khlyap ◽  
Violetta Bilozertseva ◽  
Nina Dyakonenko ◽  
Dmitrii Gaman ◽  
Andrey Mamalui ◽  
...  

AbstractThe paper reports experimental data on growth, morphology, NO sensitivity and electrophysical properties of A1Bi3C6 thin films obtained by means of simple vacuum technology. The investigated samples were condensed onto the glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. AFM investigations of the film surface before and after interaction with aggressive environment demonstrated sufficient sensitivity of the film relief to the aggressive component. Room-temperature electric field-induced characteristics were investigated for metal-semiconductor (MS) Cr/NaBiTe2 structures.


2021 ◽  
Vol 22 (3) ◽  
pp. 415-419
Author(s):  
Ya.P. Saliy ◽  
L.I. Nykyruy

The electrophysical properties of polycrystalline doped semiconductor thin films PbTe: Sb deposited on mica and sital (glass based ceramic) substrates are considered. The thickness dependencies of carrier mobility, of Hall coefficient and of Seebeck coefficient, and the correlations between these parameters for films deposited on different substrate materials were studied. The peculiarities of growth of thin films and their structural parameters are analyzed taking into account the features of the ‘substrate – film’ boundary section.


Author(s):  
I.O. Ignatieva ◽  
M.G. Volkova ◽  
I.A. Gulyaeva ◽  
A.P. Starnikova ◽  
V.V. Petrov ◽  
...  

1972 ◽  
Vol 9 (2) ◽  
pp. 449-454 ◽  
Author(s):  
F. Ciorăscu ◽  
I. Spînulescu-carnaru ◽  
C. Stănescu

1986 ◽  
Vol 143 (1) ◽  
pp. 1-6 ◽  
Author(s):  
I. Spânulescu ◽  
I. Secǎreanu ◽  
N. Bǎlţǎţeanu ◽  
Ibrahim Zaker Abdi ◽  
Tallal Khalass

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