A1Bi3C6 Thin Films as NO Sensors

2006 ◽  
Vol 915 ◽  
Author(s):  
Halyna Khlyap ◽  
Violetta Bilozertseva ◽  
Nina Dyakonenko ◽  
Dmitrii Gaman ◽  
Andrey Mamalui ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Film Surface ◽  
Electrophysical Properties ◽  
Growth Morphology ◽  
Vacuum Level ◽  
Glass Substrates ◽  
Aggressive Environment ◽  
Vacuum Technology ◽  
Before And After

AbstractThe paper reports experimental data on growth, morphology, NO sensitivity and electrophysical properties of A1Bi3C6 thin films obtained by means of simple vacuum technology. The investigated samples were condensed onto the glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. AFM investigations of the film surface before and after interaction with aggressive environment demonstrated sufficient sensitivity of the film relief to the aggressive component. Room-temperature electric field-induced characteristics were investigated for metal-semiconductor (MS) Cr/NaBiTe2 structures.

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Effect of the Heat Treatment on the Microstructure and Morphology of Cigs Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 1012 ◽  
pp. 119-124
Author(s):  
Paulo Victor Nogueira da Costa ◽  
Rodrigo Amaral de Medeiro ◽  
Carlos Luiz Ferreira ◽  
Leila Rosa Cruz
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates

This work investigates the microstructural and morphological changes on CIGS thin films submitted to a post-deposition heat treatment. The CIGS 1000 nm-thick films were deposited at room temperature by RF magnetron sputtering onto glass substrates covered with molybdenum films. After deposition, the samples were submitted to a heat treatment, with temperatures ranging from 450 to 575 oC. The treatment was also carried out under a selenium atmosphere (selenization), from 400 to 500 oC. Morphological analyzes showed that the as-deposited film was uniform and amorphous. When the treatment was carried out without selenization, the crystallization occurred at or above 450 oC, and the grains remained nanosized. However, high temperatures led to the formation of discontinuities on the film surface and the formation of extra phases, as confirmed by X-ray diffraction data. The crystallization of the films treated under selenium atmosphere took place at lower temperatures. However, above 450 °C the film surface was discontinuous, with a lot of holes, whose amount increased with the temperature, showing that the selenization process was very aggressive. X-ray diffraction analyses showed that the extra phases were eliminated during selenization and the films had a preferential orientation along [112] direction. The results indicate that in the manufacturing process of solar cells, CIGS films deposited at room temperature should be submitted to a heat treatment carried out at 450 °C (without selenization) or 400 °C (with selenization).

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Effect of Pb dopant On A.C mechanism of ZnS thin films

2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Atomic Weight ◽  
Thickness Effect ◽  
Frequency Effect ◽  
Frequency Range ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Vacuum Evaporation Technique ◽  
Effect Of Doping

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

scholarly journals Optical and Structural Properties of CdS Quantum Dots Synthesized Using (MW-CBD) Technique

2020 ◽  
pp. 44-52
Author(s):  
Ahmed Ahmed S. Abed ◽  
Sattar J. Kasim ◽  
Abbas F. Abbas
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Room Temperature ◽  
Energy Gap ◽  
Cds Nanoparticles ◽  
Cds Quantum Dots ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
High Adhesion ◽  
Uv Visible

In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.

Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide

2009 ◽  
Vol 294 ◽  
pp. 85-92 ◽  
Author(s):  
A.A. Ibrahim
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Room Temperature ◽  
Conduction Band Edge ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Temperature Electron ◽  
Transition Voltage ◽  
Dc Electrical Properties

Lead sulfide (PbS) thin films were prepared by thermal evaporation onto glass substrates from PbS powder. The structure and DC electrical properties of evaporated PbS thin film sandwich structures with thicknesses (d) up to 600 nm have been investigated. X-ray diffraction studies showed that the films were crystalline, with a preferred orientation in the [111] direction. Capacitance measurements indicated that the films had a relative permittivity of 5.7. Room-temperature current density-voltage (J–V) characteristics revealed ohmic conduction below a transition voltage (Vt) and a power–law dependence with an exponent of ≈ 2 at higher voltages. This behaviour was interpreted in terms of space–charge limited conductivity controlled by an exponential distribution of traps below the conduction band edge. Further evidence for this conduction process was provided by a linear dependence of Vt upon d2. Analysis of the results yielded a room temperature electron concentration no of ≈ (3.9 – 5.4) x 109 m-3.

The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 211-214
Author(s):  
Sang Moo Park ◽  
Takashi Tomemori ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Flexible Display ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Flexible Solar Cell ◽  
Doped Zno

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

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